Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells

K. Sasayama, S. Nakanishi, R. Yamaguchi, Y. Oyanagi, T. Ushimi, S. Gozu, T. Mozume, Atsushi Tackeuchi

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The spin relaxation process of In 0.53Ga 0.47As/ AlAs 0.56Sb 0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.

    Original languageEnglish
    Article number092401
    JournalApplied Physics Letters
    Volume100
    Issue number9
    DOIs
    Publication statusPublished - 2012 Feb 27

    Fingerprint

    excitons
    quantum wells
    relaxation time
    high speed
    pumps
    reflectance
    temperature dependence
    probes

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Sasayama, K., Nakanishi, S., Yamaguchi, R., Oyanagi, Y., Ushimi, T., Gozu, S., ... Tackeuchi, A. (2012). Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells. Applied Physics Letters, 100(9), [092401]. https://doi.org/10.1063/1.3690833

    Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells. / Sasayama, K.; Nakanishi, S.; Yamaguchi, R.; Oyanagi, Y.; Ushimi, T.; Gozu, S.; Mozume, T.; Tackeuchi, Atsushi.

    In: Applied Physics Letters, Vol. 100, No. 9, 092401, 27.02.2012.

    Research output: Contribution to journalArticle

    Sasayama, K, Nakanishi, S, Yamaguchi, R, Oyanagi, Y, Ushimi, T, Gozu, S, Mozume, T & Tackeuchi, A 2012, 'Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells', Applied Physics Letters, vol. 100, no. 9, 092401. https://doi.org/10.1063/1.3690833
    Sasayama K, Nakanishi S, Yamaguchi R, Oyanagi Y, Ushimi T, Gozu S et al. Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells. Applied Physics Letters. 2012 Feb 27;100(9). 092401. https://doi.org/10.1063/1.3690833
    Sasayama, K. ; Nakanishi, S. ; Yamaguchi, R. ; Oyanagi, Y. ; Ushimi, T. ; Gozu, S. ; Mozume, T. ; Tackeuchi, Atsushi. / Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells. In: Applied Physics Letters. 2012 ; Vol. 100, No. 9.
    @article{6bda2f15c14747abb5b3760e3eea4c57,
    title = "Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells",
    abstract = "The spin relaxation process of In 0.53Ga 0.47As/ AlAs 0.56Sb 0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.",
    author = "K. Sasayama and S. Nakanishi and R. Yamaguchi and Y. Oyanagi and T. Ushimi and S. Gozu and T. Mozume and Atsushi Tackeuchi",
    year = "2012",
    month = "2",
    day = "27",
    doi = "10.1063/1.3690833",
    language = "English",
    volume = "100",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "9",

    }

    TY - JOUR

    T1 - Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells

    AU - Sasayama, K.

    AU - Nakanishi, S.

    AU - Yamaguchi, R.

    AU - Oyanagi, Y.

    AU - Ushimi, T.

    AU - Gozu, S.

    AU - Mozume, T.

    AU - Tackeuchi, Atsushi

    PY - 2012/2/27

    Y1 - 2012/2/27

    N2 - The spin relaxation process of In 0.53Ga 0.47As/ AlAs 0.56Sb 0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.

    AB - The spin relaxation process of In 0.53Ga 0.47As/ AlAs 0.56Sb 0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.

    UR - http://www.scopus.com/inward/record.url?scp=84857975354&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84857975354&partnerID=8YFLogxK

    U2 - 10.1063/1.3690833

    DO - 10.1063/1.3690833

    M3 - Article

    VL - 100

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 9

    M1 - 092401

    ER -