Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells

K. Sasayama; S. Nakanishi; R. Yamaguchi; Y. Oyanagi; T. Ushimi; S. Gozu; T. Mozume; A. Tackeuchi

doi:10.1063/1.3690833

Exciton spin relaxation in In _0.53Ga _0.47As/AlAs _0.56Sb _0.44 quantum wells

K. Sasayama^*, S. Nakanishi, R. Yamaguchi, Y. Oyanagi, T. Ushimi, S. Gozu, T. Mozume, A. Tackeuchi

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The spin relaxation process of In _0.53Ga _0.47As/ AlAs _0.56Sb _0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.

Original language	English
Article number	092401
Journal	Applied Physics Letters
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.3690833
Publication status	Published - 2012 Feb 27

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{6bda2f15c14747abb5b3760e3eea4c57,

title = "Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells",

abstract = "The spin relaxation process of In 0.53Ga 0.47As/ AlAs 0.56Sb 0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.",

author = "K. Sasayama and S. Nakanishi and R. Yamaguchi and Y. Oyanagi and T. Ushimi and S. Gozu and T. Mozume and A. Tackeuchi",

note = "Funding Information: The authors would like to thank Mitsunori Uemura and Asako Sasoh of Waseda University for their experimental help. This work was supported in part by a Grant-in-Aid for Scientific Research (No. 22360032) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

year = "2012",

month = feb,

day = "27",

doi = "10.1063/1.3690833",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Exciton spin relaxation in In 0.53Ga 0.47As/AlAs 0.56Sb 0.44 quantum wells

AU - Sasayama, K.

AU - Nakanishi, S.

AU - Yamaguchi, R.

AU - Oyanagi, Y.

AU - Ushimi, T.

AU - Gozu, S.

AU - Mozume, T.

AU - Tackeuchi, A.

N1 - Funding Information: The authors would like to thank Mitsunori Uemura and Asako Sasoh of Waseda University for their experimental help. This work was supported in part by a Grant-in-Aid for Scientific Research (No. 22360032) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - The spin relaxation process of In 0.53Ga 0.47As/ AlAs 0.56Sb 0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.

AB - The spin relaxation process of In 0.53Ga 0.47As/ AlAs 0.56Sb 0.44 quantum wells is investigated by spin-dependent pump and probe reflectance measurements with a high time resolution of 200 fs. The observed spin relaxation time of 17.5 ps at 20 K indicates high potential for applications to high-speed optical devices. A positive temperature dependence of the spin relaxation time due to the unique band structure is observed at 30-100 K. The spin relaxation is found to be mainly governed by the Bir-Aronov-Pikus process [Sov. Phys. JETP 42, 705 (1976)] below 100 K and by the D'yakonov-Perel' process above 100 K.

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DO - 10.1063/1.3690833

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VL - 100

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JF - Applied Physics Letters

IS - 9

M1 - 092401

ER -

Exciton spin relaxation in In _0.53Ga _0.47As/AlAs _0.56Sb _0.44 quantum wells

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