Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature

K. Seki, Y. Wakisaka, T. Kaneko, T. Toriyama, T. Konishi, T. Sudayama, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi, Takashi Mizokawa, Y. Ohta

Research output: Contribution to journalArticle

50 Citations (Scopus)

Abstract

We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

Original languageEnglish
Article number155116
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume90
Issue number15
DOIs
Publication statusPublished - 2014 Oct 13
Externally publishedYes

Fingerprint

Bose-Einstein condensation
condensation
Photoelectron spectroscopy
room temperature
photoelectric emission
insulators
Semiconductor materials
Valence bands
approximation
Temperature
spectroscopy
Phase transitions
valence
temperature dependence
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Seki, K., Wakisaka, Y., Kaneko, T., Toriyama, T., Konishi, T., Sudayama, T., ... Ohta, Y. (2014). Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature. Physical Review B - Condensed Matter and Materials Physics, 90(15), [155116]. https://doi.org/10.1103/PhysRevB.90.155116

Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature. / Seki, K.; Wakisaka, Y.; Kaneko, T.; Toriyama, T.; Konishi, T.; Sudayama, T.; Saini, N. L.; Arita, M.; Namatame, H.; Taniguchi, M.; Katayama, N.; Nohara, M.; Takagi, H.; Mizokawa, Takashi; Ohta, Y.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 90, No. 15, 155116, 13.10.2014.

Research output: Contribution to journalArticle

Seki, K, Wakisaka, Y, Kaneko, T, Toriyama, T, Konishi, T, Sudayama, T, Saini, NL, Arita, M, Namatame, H, Taniguchi, M, Katayama, N, Nohara, M, Takagi, H, Mizokawa, T & Ohta, Y 2014, 'Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature', Physical Review B - Condensed Matter and Materials Physics, vol. 90, no. 15, 155116. https://doi.org/10.1103/PhysRevB.90.155116
Seki, K. ; Wakisaka, Y. ; Kaneko, T. ; Toriyama, T. ; Konishi, T. ; Sudayama, T. ; Saini, N. L. ; Arita, M. ; Namatame, H. ; Taniguchi, M. ; Katayama, N. ; Nohara, M. ; Takagi, H. ; Mizokawa, Takashi ; Ohta, Y. / Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature. In: Physical Review B - Condensed Matter and Materials Physics. 2014 ; Vol. 90, No. 15.
@article{a0f5e6ba950248ad8143639ed16e0305,
title = "Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature",
abstract = "We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.",
author = "K. Seki and Y. Wakisaka and T. Kaneko and T. Toriyama and T. Konishi and T. Sudayama and Saini, {N. L.} and M. Arita and H. Namatame and M. Taniguchi and N. Katayama and M. Nohara and H. Takagi and Takashi Mizokawa and Y. Ohta",
year = "2014",
month = "10",
day = "13",
doi = "10.1103/PhysRevB.90.155116",
language = "English",
volume = "90",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Excitonic Bose-Einstein condensation in Ta2 NiSe5 above room temperature

AU - Seki, K.

AU - Wakisaka, Y.

AU - Kaneko, T.

AU - Toriyama, T.

AU - Konishi, T.

AU - Sudayama, T.

AU - Saini, N. L.

AU - Arita, M.

AU - Namatame, H.

AU - Taniguchi, M.

AU - Katayama, N.

AU - Nohara, M.

AU - Takagi, H.

AU - Mizokawa, Takashi

AU - Ohta, Y.

PY - 2014/10/13

Y1 - 2014/10/13

N2 - We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

AB - We show that finite temperature variational cluster approximation (VCA) calculations on an extended Falicov-Kimball model can reproduce angle-resolved photoemission spectroscopy (ARPES) results on Ta2NiSe5 across a semiconductor-to-semiconductor structural phase transition at 325 K. We demonstrate that the characteristic temperature dependence of the flat-top valence band observed by ARPES is reproduced by the VCA calculation on the realistic model for an excitonic insulator only when the strong excitonic fluctuation is taken into account. The present calculations indicate that Ta2NiSe5 falls in the Bose-Einstein condensation regime of the excitonic insulator state.

UR - http://www.scopus.com/inward/record.url?scp=84908042159&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908042159&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.90.155116

DO - 10.1103/PhysRevB.90.155116

M3 - Article

AN - SCOPUS:84908042159

VL - 90

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 15

M1 - 155116

ER -