Excitonic emissions from hexagonal GaN epitaxial layers

S. Chichibu, T. Azuhata, Takayuki Sota, S. Nakamura

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    Abstract

    Excitonic photoluminescence (PL) peaks from hexagonal GaN epilayers were investigated making a connection with the analysis of the photoreflectance spectra. Free exciton emissions associated with transitions from the conduction (Γ7c) band to the A (Γ9v) and B (Γ7uv) valence bands are dominant above 100 K. Values of the full widths at half maximum of them were smaller than the thermal energy kBT up to room temperature, which suggests the dominance of excitons in the PL spectra

    Original languageEnglish
    Pages (from-to)2784-2786
    Number of pages3
    JournalJournal of Applied Physics
    Volume79
    Issue number5
    Publication statusPublished - 1996 Mar 1

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Chichibu, S., Azuhata, T., Sota, T., & Nakamura, S. (1996). Excitonic emissions from hexagonal GaN epitaxial layers. Journal of Applied Physics, 79(5), 2784-2786.