Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%)

Toshiki Makimoto*, Hisao Saito, Toshio Nishida, Naoki Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

103 Citations (Scopus)


Dilute GaAs1-xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 10 cm-3 and its bowing parameter is -22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.

Original languageEnglish
Pages (from-to)2984-2986
Number of pages3
JournalApplied Physics Letters
Issue number22
Publication statusPublished - 1997 Jun 2
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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