Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%)

Toshiki Makimoto, Hisao Saito, Toshio Nishida, Naoki Kobayashi

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

Dilute GaAs1-xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 10 cm-3 and its bowing parameter is -22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.

Original languageEnglish
Pages (from-to)2984-2986
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number22
Publication statusPublished - 1997 Jun 2
Externally publishedYes

Fingerprint

luminescence
photoluminescence
nitrogen
vapor phase epitaxy
excitation
energy
carbon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Makimoto, T., Saito, H., Nishida, T., & Kobayashi, N. (1997). Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%). Applied Physics Letters, 70(22), 2984-2986.

Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%). / Makimoto, Toshiki; Saito, Hisao; Nishida, Toshio; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 70, No. 22, 02.06.1997, p. 2984-2986.

Research output: Contribution to journalArticle

Makimoto, T, Saito, H, Nishida, T & Kobayashi, N 1997, 'Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%)', Applied Physics Letters, vol. 70, no. 22, pp. 2984-2986.
Makimoto, Toshiki ; Saito, Hisao ; Nishida, Toshio ; Kobayashi, Naoki. / Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%). In: Applied Physics Letters. 1997 ; Vol. 70, No. 22. pp. 2984-2986.
@article{7bd88ee5b1ab41cd8f0538f5e6b7c59c,
title = "Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3{\%})",
abstract = "Dilute GaAs1-xNx alloys (x<0.3{\%}) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 10 cm-3 and its bowing parameter is -22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.",
author = "Toshiki Makimoto and Hisao Saito and Toshio Nishida and Naoki Kobayashi",
year = "1997",
month = "6",
day = "2",
language = "English",
volume = "70",
pages = "2984--2986",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "22",

}

TY - JOUR

T1 - Excitonic luminescence and absorption in dilute GaAs1-xNx alloy (x<0.3%)

AU - Makimoto, Toshiki

AU - Saito, Hisao

AU - Nishida, Toshio

AU - Kobayashi, Naoki

PY - 1997/6/2

Y1 - 1997/6/2

N2 - Dilute GaAs1-xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 10 cm-3 and its bowing parameter is -22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.

AB - Dilute GaAs1-xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 10 cm-3 and its bowing parameter is -22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.

UR - http://www.scopus.com/inward/record.url?scp=0000481664&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000481664&partnerID=8YFLogxK

M3 - Article

VL - 70

SP - 2984

EP - 2986

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 22

ER -