Excitonic polariton structures in Wurtzite GaN

Kousuke Torii, Shigefusa F. Chichibu*, Takahiro Deguchi, Hisayuki Nakanishi, Takayuki Sota, Shuji Nakamura

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.

Original languageEnglish
Pages (from-to)268-276
Number of pages9
JournalPhysica B: Condensed Matter
Volume302-303
DOIs
Publication statusPublished - 2001
EventYanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan
Duration: 2000 Sep 242000 Sep 27

Keywords

  • Excitonic polariton
  • GaN
  • Lateral epitaxial overgrowth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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