Excitonic polariton structures in Wurtzite GaN

Kousuke Torii, Shigefusa F. Chichibu, Takahiro Deguchi, Hisayuki Nakanishi, Takayuki Sota, Shuji Nakamura

Research output: Contribution to journalConference article

Abstract

Reflectance, photoreflectance and photoluminescence spectra of GaN substrate prepared by lateral epitaxial overgrowth technique were measured at low temperature. All spectra were discussed based on model exciton-polariton picture, and the spectra were successfully explained by the model. Temperature dependence of transition energies was well described using a model that assume Einstein phonons.

Original languageEnglish
Pages (from-to)268-276
Number of pages9
JournalPhysica B: Condensed Matter
Volume302-303
DOIs
Publication statusPublished - 2001 Jun 30
EventYanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors - Awaji Island, Hyogo, Japan
Duration: 2000 Sep 242000 Sep 27

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Keywords

  • Excitonic polariton
  • GaN
  • Lateral epitaxial overgrowth

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Torii, K., Chichibu, S. F., Deguchi, T., Nakanishi, H., Sota, T., & Nakamura, S. (2001). Excitonic polariton structures in Wurtzite GaN. Physica B: Condensed Matter, 302-303, 268-276. https://doi.org/10.1016/S0921-4526(01)00440-9