Excitonic recombination radiation as characterization of diamonds using cathodoluminescence

H. Kawarada; A. Yamaguchi

doi:10.1016/0925-9635(93)90038-4

Excitonic recombination radiation as characterization of diamonds using cathodoluminescence

H. Kawarada^*, A. Yamaguchi

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Free-exciton and bound-exciton recombination radiation has been investigated for the characterization of crystal quality and dopants in natural high pressure synthetic and chemically vapour-deposited diamonds using cathodoluminescence. In the limited areas where the growth conditions are optimized, distinct emissions of free-exciton recombination have been observed even in polycrystalline diamond or in crystals formed in nitrogen-rich conditions. The emission is useful for local estimation of crystal purity. Bound-exciton recombination radiation reflects the acceptor concentration in homoepitaxial boron-doped films. The emissions are dominant in the range 1.8-5.5 eV.

Original language	English
Pages (from-to)	100-105
Number of pages	6
Journal	Diamond and Related Materials
Volume	2
Issue number	2-4
DOIs	https://doi.org/10.1016/0925-9635(93)90038-4
Publication status	Published - 1993 Mar 31

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Physics and Astronomy(all)
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/0925-9635(93)90038-4

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abstract = "Free-exciton and bound-exciton recombination radiation has been investigated for the characterization of crystal quality and dopants in natural high pressure synthetic and chemically vapour-deposited diamonds using cathodoluminescence. In the limited areas where the growth conditions are optimized, distinct emissions of free-exciton recombination have been observed even in polycrystalline diamond or in crystals formed in nitrogen-rich conditions. The emission is useful for local estimation of crystal purity. Bound-exciton recombination radiation reflects the acceptor concentration in homoepitaxial boron-doped films. The emissions are dominant in the range 1.8-5.5 eV.",

author = "H. Kawarada and A. Yamaguchi",

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AU - Kawarada, H.

AU - Yamaguchi, A.

PY - 1993/3/31

Y1 - 1993/3/31

N2 - Free-exciton and bound-exciton recombination radiation has been investigated for the characterization of crystal quality and dopants in natural high pressure synthetic and chemically vapour-deposited diamonds using cathodoluminescence. In the limited areas where the growth conditions are optimized, distinct emissions of free-exciton recombination have been observed even in polycrystalline diamond or in crystals formed in nitrogen-rich conditions. The emission is useful for local estimation of crystal purity. Bound-exciton recombination radiation reflects the acceptor concentration in homoepitaxial boron-doped films. The emissions are dominant in the range 1.8-5.5 eV.

AB - Free-exciton and bound-exciton recombination radiation has been investigated for the characterization of crystal quality and dopants in natural high pressure synthetic and chemically vapour-deposited diamonds using cathodoluminescence. In the limited areas where the growth conditions are optimized, distinct emissions of free-exciton recombination have been observed even in polycrystalline diamond or in crystals formed in nitrogen-rich conditions. The emission is useful for local estimation of crystal purity. Bound-exciton recombination radiation reflects the acceptor concentration in homoepitaxial boron-doped films. The emissions are dominant in the range 1.8-5.5 eV.

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JO - Diamond and Related Materials

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ER -

Excitonic recombination radiation as characterization of diamonds using cathodoluminescence

Abstract

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