Experimental 256-Mb DRAM with boosted sense-ground scheme

Mikio Asakura, Tsukasa Ooishi, Masaki Tsukude, Shigeki Tomishima, Takahisa Eimori, Hideto Hidaka, Yoshikazu Ohno, Kazutani Arimoto, Kazuyasu Fujishima, Tadashi Nishimura, Tsutomu Yoshihara

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

In developing the 256-Mb DRAM, the data retention characteristics must inevitably be improved. In order for DRAM's to remain the semiconductor device with the largest production volume in the 256-Mb era, we must develop a cost effective device with a small chip size and a large process tolerance. In this paper, we propose the BSG (Boosted Sense-Ground) scheme for data retention and FOGOS (FOlded Global and Open Segment bit-line) structure for chip size reduction. We have fabricated an experimental 256-Mb DRAM with these technologies and obtained a chip size of 304 mm2 and a performance of 34 ns access time.

Original languageEnglish
Pages (from-to)1303-1309
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume29
Issue number11
DOIs
Publication statusPublished - 1994 Nov
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Asakura, M., Ooishi, T., Tsukude, M., Tomishima, S., Eimori, T., Hidaka, H., Ohno, Y., Arimoto, K., Fujishima, K., Nishimura, T., & Yoshihara, T. (1994). Experimental 256-Mb DRAM with boosted sense-ground scheme. IEEE Journal of Solid-State Circuits, 29(11), 1303-1309. https://doi.org/10.1109/4.328628