Experimental 256-Mb DRAM with boosted sense-ground scheme

Mikio Asakura, Tsukasa Ooishi, Masaki Tsukude, Shigeki Tomishima, Takahisa Eimori, Hideto Hidaka, Yoshikazu Ohno, Kazutani Arimoto, Kazuyasu Fujishima, Tadashi Nishimura, Tsutomu Yoshihara

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19 Citations (Scopus)

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Engineering & Materials Science