Experimental and theoretical investigation of kt2and velocity in YbGaN films by DFT

Yuna Koike; Junjun Jia; Masashi Suzuki; Takahiko Yanagitani

doi:10.1109/IUS52206.2021.9593474

Experimental and theoretical investigation of k_t²and velocity in YbGaN films by DFT

Yuna Koike, Junjun Jia, Masashi Suzuki, Takahiko Yanagitani

Research output: Contribution to journal › Conference article › peer-review

Abstract

GaN films have been attracting attention for hetero-structure field effect transistors with high electron mobility. The piezoelectric effects of GaN act as a key role for the 2DEG confinement. In previous study, our group experimentally discovered that alloying YbN into GaN enhances the electromechanical coupling coefficient k_{\{t}}{2}. In this study, we compared the experimental and theoretical values of k_{\{t}{2}} and acoustic velocity predicted by DFT.

Original language	English
Journal	IEEE International Ultrasonics Symposium, IUS
DOIs	https://doi.org/10.1109/IUS52206.2021.9593474
Publication status	Published - 2021
Event	2021 IEEE International Ultrasonics Symposium, IUS 2021 - Virtual, Online, China Duration: 2011 Sept 11 → 2011 Sept 16

Keywords

YbGaN
transistor

ASJC Scopus subject areas

Acoustics and Ultrasonics

Access to Document

10.1109/IUS52206.2021.9593474

Cite this

@article{3575cfe1f438452293eba9c8a416dcbe,

title = "Experimental and theoretical investigation of kt2and velocity in YbGaN films by DFT",

abstract = "GaN films have been attracting attention for hetero-structure field effect transistors with high electron mobility. The piezoelectric effects of GaN act as a key role for the 2DEG confinement. In previous study, our group experimentally discovered that alloying YbN into GaN enhances the electromechanical coupling coefficient k_{\{t}}{2}. In this study, we compared the experimental and theoretical values of k_{\{t}{2}} and acoustic velocity predicted by DFT. ",

keywords = "YbGaN, transistor",

author = "Yuna Koike and Junjun Jia and Masashi Suzuki and Takahiko Yanagitani",

note = "Funding Information: This work was supported by the JST CREST (No. JPMJCR20Q1) and KAKENHI (Grant-in-Aid for Scientific Research No. 19H02202, and No. 21K18734). Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Ultrasonics Symposium, IUS 2021 ; Conference date: 11-09-2011 Through 16-09-2011",

year = "2021",

doi = "10.1109/IUS52206.2021.9593474",

language = "English",

journal = "IEEE International Ultrasonics Symposium, IUS",

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T1 - Experimental and theoretical investigation of kt2and velocity in YbGaN films by DFT

AU - Koike, Yuna

AU - Jia, Junjun

AU - Suzuki, Masashi

AU - Yanagitani, Takahiko

PY - 2021

Y1 - 2021

N2 - GaN films have been attracting attention for hetero-structure field effect transistors with high electron mobility. The piezoelectric effects of GaN act as a key role for the 2DEG confinement. In previous study, our group experimentally discovered that alloying YbN into GaN enhances the electromechanical coupling coefficient k_{\{t}}{2}. In this study, we compared the experimental and theoretical values of k_{\{t}{2}} and acoustic velocity predicted by DFT.

AB - GaN films have been attracting attention for hetero-structure field effect transistors with high electron mobility. The piezoelectric effects of GaN act as a key role for the 2DEG confinement. In previous study, our group experimentally discovered that alloying YbN into GaN enhances the electromechanical coupling coefficient k_{\{t}}{2}. In this study, we compared the experimental and theoretical values of k_{\{t}{2}} and acoustic velocity predicted by DFT.

KW - YbGaN

KW - transistor

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DO - 10.1109/IUS52206.2021.9593474

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JO - IEEE International Ultrasonics Symposium, IUS

JF - IEEE International Ultrasonics Symposium, IUS

T2 - 2021 IEEE International Ultrasonics Symposium, IUS 2021

Y2 - 11 September 2011 through 16 September 2011

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