Experimental and theoretical investigation of kt2and velocity in YbGaN films by DFT

Yuna Koike, Junjun Jia, Masashi Suzuki, Takahiko Yanagitani

Research output: Contribution to journalConference articlepeer-review

Abstract

GaN films have been attracting attention for hetero-structure field effect transistors with high electron mobility. The piezoelectric effects of GaN act as a key role for the 2DEG confinement. In previous study, our group experimentally discovered that alloying YbN into GaN enhances the electromechanical coupling coefficient k_{\{t}}{2}. In this study, we compared the experimental and theoretical values of k_{\{t}{2}} and acoustic velocity predicted by DFT.

Original languageEnglish
JournalIEEE International Ultrasonics Symposium, IUS
DOIs
Publication statusPublished - 2021
Event2021 IEEE International Ultrasonics Symposium, IUS 2021 - Virtual, Online, China
Duration: 2011 Sep 112011 Sep 16

Keywords

  • YbGaN
  • transistor

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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