Abstract
The shift of the Fermi level in polycrystalline aluminum doped zinc oxide (AZO) films was studied by investigating the carrier density dependence of the optical band gap and work function. The optical band gap showed a positive linear relationship with the two-thirds power of carrier density n e 2 / 3. The work function ranged from 4.56 to 4.73 eV and showed a negative linear relationship with n e 2 / 3. These two phenomena are well explained on the basis of Burstein-Moss effect by considering the nonparabolic nature of the conduction band, indicating that the shift of Fermi level exhibits a nonparabolic nature of the conduction band for the polycrystalline AZO film. The variation of work function with the carrier density reveals that the shift of the surface Fermi level can be tailored by the carrier density in the polycrystalline AZO films. The controllability between the work function and the carrier density in polycrystalline AZO films offers great potential advantages in the development of optoelectronic devices.
| Original language | English |
|---|---|
| Article number | 013718 |
| Journal | Journal of Applied Physics |
| Volume | 112 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Jul 1 |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films. / Jia, Junjun; Takasaki, Aiko; Oka, Nobuto; Shigesato, Yuzo.
In: Journal of Applied Physics, Vol. 112, No. 1, 013718, 01.07.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Experimental observation on the Fermi level shift in polycrystalline Al-doped ZnO films
AU - Jia, Junjun
AU - Takasaki, Aiko
AU - Oka, Nobuto
AU - Shigesato, Yuzo
PY - 2012/7/1
Y1 - 2012/7/1
N2 - The shift of the Fermi level in polycrystalline aluminum doped zinc oxide (AZO) films was studied by investigating the carrier density dependence of the optical band gap and work function. The optical band gap showed a positive linear relationship with the two-thirds power of carrier density n e 2 / 3. The work function ranged from 4.56 to 4.73 eV and showed a negative linear relationship with n e 2 / 3. These two phenomena are well explained on the basis of Burstein-Moss effect by considering the nonparabolic nature of the conduction band, indicating that the shift of Fermi level exhibits a nonparabolic nature of the conduction band for the polycrystalline AZO film. The variation of work function with the carrier density reveals that the shift of the surface Fermi level can be tailored by the carrier density in the polycrystalline AZO films. The controllability between the work function and the carrier density in polycrystalline AZO films offers great potential advantages in the development of optoelectronic devices.
AB - The shift of the Fermi level in polycrystalline aluminum doped zinc oxide (AZO) films was studied by investigating the carrier density dependence of the optical band gap and work function. The optical band gap showed a positive linear relationship with the two-thirds power of carrier density n e 2 / 3. The work function ranged from 4.56 to 4.73 eV and showed a negative linear relationship with n e 2 / 3. These two phenomena are well explained on the basis of Burstein-Moss effect by considering the nonparabolic nature of the conduction band, indicating that the shift of Fermi level exhibits a nonparabolic nature of the conduction band for the polycrystalline AZO film. The variation of work function with the carrier density reveals that the shift of the surface Fermi level can be tailored by the carrier density in the polycrystalline AZO films. The controllability between the work function and the carrier density in polycrystalline AZO films offers great potential advantages in the development of optoelectronic devices.
UR - http://www.scopus.com/inward/record.url?scp=84864153486&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864153486&partnerID=8YFLogxK
U2 - 10.1063/1.4733969
DO - 10.1063/1.4733969
M3 - Article
AN - SCOPUS:84864153486
VL - 112
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 1
M1 - 013718
ER -