Extendibility of EUV resists in the exposure wavelength from 13.5 down to 3.1 nm for next-generation lithography

Tomoko G. Oyama, Tomohiro Takahashi, Akihiro Oshima, Masakazu Washio, Seiichi Tagawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The increasing density of semiconductor devices has required the development of high resolution exposure techniques. The miniaturization of feature sizes has been achieved mainly by shortening the exposure wavelength. Extreme ultraviolet (EUV) lithography at 13.5 nm exposure wavelength will be introduced into pilot lines in 2011, and high volume manufacturing is expected to be started in 2013/2014. Furthermore, the possibility of extending EUV lithography down to sub 5 nm has been proposed as next-generation lithography, by reducing the exposure wavelength to 6.x nm. ASML has estimated the throughput of exposure system for 6.x nm EUV lithography is comparable with 13.5 nm lithography, based on the experiments such as reflective multilayer optics. However, the estimation has not included the sensitivities of resist materials, which is one of the most important criteria for the practical lithography systems. Here, the sensitivities of several kinds of typical resists in EUV/soft X-ray wavelength down to 3.1 nm were actually evaluated by experiments. The sensitivities of resist materials were roughly proportional to the absorbed dose calculated by line absorption coefficients of resists. The dependence of the exposure wavelength on EUV resist sensitivity could be theoretically predicted for the next-generation lithography, if sensitivity at a certain EUV wavelength like 13.5 nm is experimentally obtained.

Original languageEnglish
Title of host publicationAdvances in Resist Materials and Processing Technology XXVIII
DOIs
Publication statusPublished - 2011 May 17
EventAdvances in Resist Materials and Processing Technology XXVIII - San Jose, CA, United States
Duration: 2011 Feb 282011 Mar 2

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7972
ISSN (Print)0277-786X

Conference

ConferenceAdvances in Resist Materials and Processing Technology XXVIII
CountryUnited States
CitySan Jose, CA
Period11/2/2811/3/2

Keywords

  • 13.5 nm
  • 6.7 nm
  • Chemically amplified resist
  • Dissociative electron attachment
  • EUV resist
  • Extreme ultraviolet resist
  • Resist sensitivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Oyama, T. G., Takahashi, T., Oshima, A., Washio, M., & Tagawa, S. (2011). Extendibility of EUV resists in the exposure wavelength from 13.5 down to 3.1 nm for next-generation lithography. In Advances in Resist Materials and Processing Technology XXVIII [797210] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7972). https://doi.org/10.1117/12.881665