Extraction of Electromechanical Coupling Coefficient of Film/Substrate Structure by Using the Ratio of a Third Mode Resonant Frequency to a Fundamental Mode Resonant Frequency

Makoto Totsuka, Takahiko Yanagitani

    Research output: Contribution to journalConference article

    Abstract

    The electromechanical coupling coefficient k-{\text{t}^{2}} is an important parameter for determining the bandwidth and insertion loss of the RF filters. A resonance antiresonance method is recommended for the determination of k-{\text{t}^{2}} for the piezoelectric film, according to IEEE standard. However, a self-standing film structure (FBAR) is required to use this method. It is convenient to estimate the k-{\text{t}^{2}} of piezoelectric film in film/substrate structure (HBAR) before the FBAR process. In this study, we propose a new k-{\text{t}^{2}} determination method by using the ratio of a third mode resonant frequency to a fundamental mode resonant frequency in HBAR without removing the substrate.

    Original languageEnglish
    Article number8580130
    JournalIEEE International Ultrasonics Symposium, IUS
    Volume2018-January
    DOIs
    Publication statusPublished - 2018 Jan 1
    Event2018 IEEE International Ultrasonics Symposium, IUS 2018 - Kobe, Japan
    Duration: 2018 Oct 222018 Oct 25

    Fingerprint

    coupling coefficients
    resonant frequencies
    insertion loss
    bandwidth
    filters
    estimates

    Keywords

    • electromechanical coupling coefficient
    • HBAR
    • piezoelectric film
    • resonant frequency

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    Cite this

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    title = "Extraction of Electromechanical Coupling Coefficient of Film/Substrate Structure by Using the Ratio of a Third Mode Resonant Frequency to a Fundamental Mode Resonant Frequency",
    abstract = "The electromechanical coupling coefficient k-{\text{t}^{2}} is an important parameter for determining the bandwidth and insertion loss of the RF filters. A resonance antiresonance method is recommended for the determination of k-{\text{t}^{2}} for the piezoelectric film, according to IEEE standard. However, a self-standing film structure (FBAR) is required to use this method. It is convenient to estimate the k-{\text{t}^{2}} of piezoelectric film in film/substrate structure (HBAR) before the FBAR process. In this study, we propose a new k-{\text{t}^{2}} determination method by using the ratio of a third mode resonant frequency to a fundamental mode resonant frequency in HBAR without removing the substrate.",
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    author = "Makoto Totsuka and Takahiko Yanagitani",
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    T1 - Extraction of Electromechanical Coupling Coefficient of Film/Substrate Structure by Using the Ratio of a Third Mode Resonant Frequency to a Fundamental Mode Resonant Frequency

    AU - Totsuka, Makoto

    AU - Yanagitani, Takahiko

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    N2 - The electromechanical coupling coefficient k-{\text{t}^{2}} is an important parameter for determining the bandwidth and insertion loss of the RF filters. A resonance antiresonance method is recommended for the determination of k-{\text{t}^{2}} for the piezoelectric film, according to IEEE standard. However, a self-standing film structure (FBAR) is required to use this method. It is convenient to estimate the k-{\text{t}^{2}} of piezoelectric film in film/substrate structure (HBAR) before the FBAR process. In this study, we propose a new k-{\text{t}^{2}} determination method by using the ratio of a third mode resonant frequency to a fundamental mode resonant frequency in HBAR without removing the substrate.

    AB - The electromechanical coupling coefficient k-{\text{t}^{2}} is an important parameter for determining the bandwidth and insertion loss of the RF filters. A resonance antiresonance method is recommended for the determination of k-{\text{t}^{2}} for the piezoelectric film, according to IEEE standard. However, a self-standing film structure (FBAR) is required to use this method. It is convenient to estimate the k-{\text{t}^{2}} of piezoelectric film in film/substrate structure (HBAR) before the FBAR process. In this study, we propose a new k-{\text{t}^{2}} determination method by using the ratio of a third mode resonant frequency to a fundamental mode resonant frequency in HBAR without removing the substrate.

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    KW - HBAR

    KW - piezoelectric film

    KW - resonant frequency

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