Extraction of the contact resistance from the saturation region of rubrene single-crystal transistors

Masaki Imakawa, Kosuke Sawabe, Yohei Yomogida, Yoshihiro Iwasa, Taishi Takenobu

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    A modified transmission-line method (TLM) is proposed to extract the contact resistance from the transistor saturation region. The conventional TLM requires a linear current-voltage characteristic, and this requirement strongly limits its application. In this study, we focused on the pinch-off point of the output characteristics and analyzed the contact resistance using nonlinear output curves. We applied the modified TLM to both p- and n-type rubrene single-crystal transistors and compared the mobility differences in terms of both the intrinsic bandwidth and the extrinsic carrier trap density.

    Original languageEnglish
    Article number233301
    JournalApplied Physics Letters
    Issue number23
    Publication statusPublished - 2011 Dec 5


    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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