Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu; H. Takashino; M. Kidera; A. Teramoto; H. Umeda; K. Ishikawa; N. Kotani; M. Inuishi

Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu^*, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, M. Inuishi

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φ_b = 3.3 eV and m*_cm₀ = 0.41, is obtained after the extraction of various samples.

Original language	English
Pages	257-260
Number of pages	4
Publication status	Published - 2000 Jan 1
Externally published	Yes
Event	International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA Duration: 2000 Sept 6 → 2000 Sept 8

Conference

Conference	International Conference on Simulation of Semiconductor Processes and Devices
City	Seattle, WA, USA
Period	00/9/6 → 00/9/8

ASJC Scopus subject areas

Engineering(all)

Cite this

@conference{a4de520988b0457fae38697a19054e59,

title = "Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors",

abstract = "The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.",

author = "K. Eikyu and H. Takashino and M. Kidera and A. Teramoto and H. Umeda and K. Ishikawa and N. Kotani and M. Inuishi",

year = "2000",

month = jan,

day = "1",

language = "English",

pages = "257--260",

note = "International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 06-09-2000 Through 08-09-2000",

}

TY - CONF

T1 - Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

AU - Eikyu, K.

AU - Takashino, H.

AU - Kidera, M.

AU - Teramoto, A.

AU - Umeda, H.

AU - Ishikawa, K.

AU - Kotani, N.

AU - Inuishi, M.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.

AB - The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.

UR - http://www.scopus.com/inward/record.url?scp=0033679914&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033679914&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033679914

SP - 257

EP - 260

T2 - International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 6 September 2000 through 8 September 2000

ER -

Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

Abstract

Conference

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this