Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, Masahide Inuishi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalUnknown Journal
Publication statusPublished - 2000
Externally publishedYes

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MOS capacitors
capacitors
Oxides
oxides
simulators
Simulators
graphical user interface
transition layers
Graphical user interfaces

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Eikyu, K., Takashino, H., Kidera, M., Teramoto, A., Umeda, H., Ishikawa, K., ... Inuishi, M. (2000). Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors. Unknown Journal, 257-260.

Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors. / Eikyu, K.; Takashino, H.; Kidera, M.; Teramoto, A.; Umeda, H.; Ishikawa, K.; Kotani, N.; Inuishi, Masahide.

In: Unknown Journal, 2000, p. 257-260.

Research output: Contribution to journalArticle

Eikyu, K, Takashino, H, Kidera, M, Teramoto, A, Umeda, H, Ishikawa, K, Kotani, N & Inuishi, M 2000, 'Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors', Unknown Journal, pp. 257-260.
Eikyu K, Takashino H, Kidera M, Teramoto A, Umeda H, Ishikawa K et al. Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors. Unknown Journal. 2000;257-260.
Eikyu, K. ; Takashino, H. ; Kidera, M. ; Teramoto, A. ; Umeda, H. ; Ishikawa, K. ; Kotani, N. ; Inuishi, Masahide. / Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors. In: Unknown Journal. 2000 ; pp. 257-260.
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