Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors

K. Eikyu, H. Takashino, M. Kidera, A. Teramoto, H. Umeda, K. Ishikawa, N. Kotani, M. Inuishi

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

The physical oxide thickness of ultrathin oxides is extracted using tunneling current characteristics of MOS capacitors. An extraction tool has been developed for the semiautomatic extraction. The tool has implemented nonlinear least square solver and GUIs. A tunneling current model is incorporated into the device simulator MIDSIP-T and it is used as a core simulator of the extraction system. It is found that the transition layer should be considered in the extraction of very thin oxide thickness below 4 nm. A unified parameter set, φb = 3.3 eV and m*cm0 = 0.41, is obtained after the extraction of various samples.

Original languageEnglish
Pages257-260
Number of pages4
Publication statusPublished - 2000 Jan 1
EventInternational Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA
Duration: 2000 Sep 62000 Sep 8

Conference

ConferenceInternational Conference on Simulation of Semiconductor Processes and Devices
CitySeattle, WA, USA
Period00/9/600/9/8

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Eikyu, K., Takashino, H., Kidera, M., Teramoto, A., Umeda, H., Ishikawa, K., Kotani, N., & Inuishi, M. (2000). Extraction of the physical oxide thickness using the electrical characteristics of MOS capacitors. 257-260. Paper presented at International Conference on Simulation of Semiconductor Processes and Devices, Seattle, WA, USA, .