Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

E. Toyota, Masakazu Washio, H. Watanabe, H. Sumitani

    Research output: Contribution to journalArticle

    Abstract

    The double exposures using a 2× mask for one-dimensional pattern formation in x-ray lithography were analyzed. The usable proximity gap limited the extendibility of x-ray lithography. A 1:1 exposure mask formed a line and space (L/S) pattern of 70 nm linewidth and 140 nm pitch. The results show that by 2× mask, a gap of more than 1000 μm canbe used to form a L/S pattern of 200 nm pitch.

    Original languageEnglish
    Pages (from-to)2821-2825
    Number of pages5
    JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
    Volume21
    Issue number6
    Publication statusPublished - 2003 Nov

    Fingerprint

    Lithography
    proximity
    Masks
    masks
    lithography
    Lighting
    illumination
    X rays
    expansion
    x rays
    Linewidth

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Surfaces and Interfaces
    • Physics and Astronomy (miscellaneous)

    Cite this

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    abstract = "The double exposures using a 2× mask for one-dimensional pattern formation in x-ray lithography were analyzed. The usable proximity gap limited the extendibility of x-ray lithography. A 1:1 exposure mask formed a line and space (L/S) pattern of 70 nm linewidth and 140 nm pitch. The results show that by 2× mask, a gap of more than 1000 μm canbe used to form a L/S pattern of 200 nm pitch.",
    author = "E. Toyota and Masakazu Washio and H. Watanabe and H. Sumitani",
    year = "2003",
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    T1 - Extreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

    AU - Toyota, E.

    AU - Washio, Masakazu

    AU - Watanabe, H.

    AU - Sumitani, H.

    PY - 2003/11

    Y1 - 2003/11

    N2 - The double exposures using a 2× mask for one-dimensional pattern formation in x-ray lithography were analyzed. The usable proximity gap limited the extendibility of x-ray lithography. A 1:1 exposure mask formed a line and space (L/S) pattern of 70 nm linewidth and 140 nm pitch. The results show that by 2× mask, a gap of more than 1000 μm canbe used to form a L/S pattern of 200 nm pitch.

    AB - The double exposures using a 2× mask for one-dimensional pattern formation in x-ray lithography were analyzed. The usable proximity gap limited the extendibility of x-ray lithography. A 1:1 exposure mask formed a line and space (L/S) pattern of 70 nm linewidth and 140 nm pitch. The results show that by 2× mask, a gap of more than 1000 μm canbe used to form a L/S pattern of 200 nm pitch.

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    JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

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