Extremely high characteristic temperature T0 of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami, Yuichi Matsushima, Y. Takahashi

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Abstract

The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL `see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

Original languageEnglish
Pages (from-to)192-193
Number of pages2
JournalElectronics Letters
Volume31
Issue number3
DOIs
Publication statusPublished - 1995 Feb 2
Externally publishedYes

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Quantum well lasers
Electrons
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Extremely high characteristic temperature T0 of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer. / Usami, M.; Matsushima, Yuichi; Takahashi, Y.

In: Electronics Letters, Vol. 31, No. 3, 02.02.1995, p. 192-193.

Research output: Contribution to journalArticle

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