Extremely high characteristic temperature T0 of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami; Yuichi Matsushima; Y. Takahashi

doi:10.1049/el:19950137

Extremely high characteristic temperature T₀ of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

M. Usami^*, Yuichi Matsushima, Y. Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL `see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T₀ of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

Original language	English
Pages (from-to)	192-193
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1049/el:19950137
Publication status	Published - 1995 Feb 2
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Extremely high characteristic temperature T0 of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer",

abstract = "The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL `see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.",

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T1 - Extremely high characteristic temperature T0 of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

AU - Usami, M.

AU - Matsushima, Yuichi

AU - Takahashi, Y.

PY - 1995/2/2

Y1 - 1995/2/2

N2 - The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL `see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

AB - The authors investigate the incorporation of a GaAs/InGaP superlattice optical confinement layer (SL-OCL) in 0.98 μm InGaAs/InGaP strained quantum-well (QW) lasers. A theoretical study of the multiquantum barrier (MQB) effect of the GaAs/InGaP SL indicates that electrons in the GaAs OCL `see' greater than two times the barrier height of the classical bulk barrier height. Experimentally, an extremely high characteristic temperature T0 of 300 K around RT was obtained, which is mainly due to the enhancement of the carrier confinement due to the MQB effect of the SL-OCL.

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Extremely high characteristic temperature T₀ of 0.98 μm InGaAs/InGaP strained quantum well lasers with GaAs/InGaP superlattice optical confinement layer

Abstract

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