Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating

M. Horita, T. Yazaki, S. Tanaka, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

Improvement of diffraction efficiency of a vertically and contra-directionally coupled semiconductor waveguide type optical add and drop multiplexer was investigated theoretically and experimentally. Numerical calculations clarified that it was necessary to introduce a deep grating in order to attain low crosstalk characteristics required for practical application. Devices with a grating having a depth of 200 nm were fabricated by a five-step metal organic vapor phase epitaxy (MOVPE) process accompanied by reactive ion etching (RIE) and wet etching. Such a deep grating was realized by an optimization of surface treatment prior to MOVPE regrowth and growth condition. An extremely low crosstalk of -36 dB was successfully achieved.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages458-461
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
Event2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA
Duration: 2000 May 142000 May 18

Other

Other2000 International Conference on Indium Phosphide and Related Materials
CityWilliamsburg, VA, USA
Period00/5/1400/5/18

Fingerprint

Delta modulation
Vapor phase epitaxy
Diffraction gratings
Crosstalk
crosstalk
Metals
gratings
Semiconductor materials
vapor phase epitaxy
Diffraction efficiency
Wet etching
Reactive ion etching
etching
Surface treatment
Waveguides
surface treatment
metals
waveguides
optimization
diffraction

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Horita, M., Yazaki, T., Tanaka, S., & Matsushima, Y. (2000). Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 458-461)

Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating. / Horita, M.; Yazaki, T.; Tanaka, S.; Matsushima, Yuichi.

Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2000. p. 458-461.

Research output: Chapter in Book/Report/Conference proceedingChapter

Horita, M, Yazaki, T, Tanaka, S & Matsushima, Y 2000, Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating. in Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 458-461, 2000 International Conference on Indium Phosphide and Related Materials, Williamsburg, VA, USA, 00/5/14.
Horita M, Yazaki T, Tanaka S, Matsushima Y. Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2000. p. 458-461
Horita, M. ; Yazaki, T. ; Tanaka, S. ; Matsushima, Yuichi. / Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating. Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2000. pp. 458-461
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