Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating

M. Horita, T. Yazaki, S. Tanaka, Yuichi Matsushima

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

Improvement of diffraction efficiency of a vertically and contra-directionally coupled semiconductor waveguide type optical add and drop multiplexer was investigated theoretically and experimentally. Numerical calculations clarified that it was necessary to introduce a deep grating in order to attain low crosstalk characteristics required for practical application. Devices with a grating having a depth of 200 nm were fabricated by a five-step metal organic vapor phase epitaxy (MOVPE) process accompanied by reactive ion etching (RIE) and wet etching. Such a deep grating was realized by an optimization of surface treatment prior to MOVPE regrowth and growth condition. An extremely low crosstalk of -36 dB was successfully achieved.

Original languageEnglish
Title of host publicationConference Proceedings - International Conference on Indium Phosphide and Related Materials
Pages458-461
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
Event2000 International Conference on Indium Phosphide and Related Materials - Williamsburg, VA, USA
Duration: 2000 May 142000 May 18

Other

Other2000 International Conference on Indium Phosphide and Related Materials
CityWilliamsburg, VA, USA
Period00/5/1400/5/18

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Materials Science(all)

Cite this

Horita, M., Yazaki, T., Tanaka, S., & Matsushima, Y. (2000). Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating. In Conference Proceedings - International Conference on Indium Phosphide and Related Materials (pp. 458-461)