Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have applied nitrogen atomic-layer-doping to AlGaAs/GaAs single quantum wells. The atomic-layer-doping was performed at the center of the GaAs quantum well. The resulting structures show sharp photoluminescence lines with a full width at half maximum of 0.3 meV at 8 K. These lines are observed at longer wavelength than those obtained for undoped single quantum wells, indicating that they correspond to the excitons bound to nitrogen atoms in the quantum wells. The full width at half maximum of these nitrogen-related lines depends on the quantum well width. The lines remain sharp above a well width of 10 nm, while they become broad at 5 nm. This suggests that the diameter of the exciton bound to N atoms is about 10 nm. Furthermore, the binding energy of the excitons increases with increasing substrate temperature during the atomic-layer-doping.

Original languageEnglish
Pages (from-to)1299-1301
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number2 SUPPL. B
Publication statusPublished - 1996 Feb
Externally publishedYes

Fingerprint

Semiconductor quantum wells
aluminum gallium arsenides
Photoluminescence
quantum wells
Nitrogen
photoluminescence
nitrogen
Excitons
Doping (additives)
excitons
Full width at half maximum
Atoms
K lines
Binding energy
nitrogen atoms
binding energy
Wavelength
Substrates
wavelengths
atoms

Keywords

  • AlGaAs/GaAs
  • Atomic-layer-doping
  • Excitons
  • Isoelectronic traps
  • MBE
  • Nitrogen
  • Photoluminescence
  • Quantum well

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

Cite this

@article{718fba48fe314a678d77750705a2b7e4,
title = "Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells",
abstract = "We have applied nitrogen atomic-layer-doping to AlGaAs/GaAs single quantum wells. The atomic-layer-doping was performed at the center of the GaAs quantum well. The resulting structures show sharp photoluminescence lines with a full width at half maximum of 0.3 meV at 8 K. These lines are observed at longer wavelength than those obtained for undoped single quantum wells, indicating that they correspond to the excitons bound to nitrogen atoms in the quantum wells. The full width at half maximum of these nitrogen-related lines depends on the quantum well width. The lines remain sharp above a well width of 10 nm, while they become broad at 5 nm. This suggests that the diameter of the exciton bound to N atoms is about 10 nm. Furthermore, the binding energy of the excitons increases with increasing substrate temperature during the atomic-layer-doping.",
keywords = "AlGaAs/GaAs, Atomic-layer-doping, Excitons, Isoelectronic traps, MBE, Nitrogen, Photoluminescence, Quantum well",
author = "Toshiki Makimoto and Naoki Kobayashi",
year = "1996",
month = "2",
language = "English",
volume = "35",
pages = "1299--1301",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "2 SUPPL. B",

}

TY - JOUR

T1 - Extremely sharp photoluminescence lines from nitrogen atomic-layer-doped AlGaAs/GaAs single quantum wells

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1996/2

Y1 - 1996/2

N2 - We have applied nitrogen atomic-layer-doping to AlGaAs/GaAs single quantum wells. The atomic-layer-doping was performed at the center of the GaAs quantum well. The resulting structures show sharp photoluminescence lines with a full width at half maximum of 0.3 meV at 8 K. These lines are observed at longer wavelength than those obtained for undoped single quantum wells, indicating that they correspond to the excitons bound to nitrogen atoms in the quantum wells. The full width at half maximum of these nitrogen-related lines depends on the quantum well width. The lines remain sharp above a well width of 10 nm, while they become broad at 5 nm. This suggests that the diameter of the exciton bound to N atoms is about 10 nm. Furthermore, the binding energy of the excitons increases with increasing substrate temperature during the atomic-layer-doping.

AB - We have applied nitrogen atomic-layer-doping to AlGaAs/GaAs single quantum wells. The atomic-layer-doping was performed at the center of the GaAs quantum well. The resulting structures show sharp photoluminescence lines with a full width at half maximum of 0.3 meV at 8 K. These lines are observed at longer wavelength than those obtained for undoped single quantum wells, indicating that they correspond to the excitons bound to nitrogen atoms in the quantum wells. The full width at half maximum of these nitrogen-related lines depends on the quantum well width. The lines remain sharp above a well width of 10 nm, while they become broad at 5 nm. This suggests that the diameter of the exciton bound to N atoms is about 10 nm. Furthermore, the binding energy of the excitons increases with increasing substrate temperature during the atomic-layer-doping.

KW - AlGaAs/GaAs

KW - Atomic-layer-doping

KW - Excitons

KW - Isoelectronic traps

KW - MBE

KW - Nitrogen

KW - Photoluminescence

KW - Quantum well

UR - http://www.scopus.com/inward/record.url?scp=0030080296&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030080296&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030080296

VL - 35

SP - 1299

EP - 1301

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2 SUPPL. B

ER -