Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.

Original languageEnglish
Pages (from-to)1527-1530
Number of pages4
JournalJournal of Electronic Materials
Volume25
Issue number9
Publication statusPublished - 1996 Sep
Externally publishedYes

Fingerprint

Semiconductor quantum wells
aluminum gallium arsenides
Photoluminescence
Nitrogen
quantum wells
photoluminescence
Luminescence
nitrogen
Doping (additives)
Tungsten
luminescence
Excitons
Wavelength
Atoms
gallium arsenide
nitrogen atoms
filaments
tungsten
excitons
wavelengths

Keywords

  • δ-doping
  • AlGaAs/GaAs
  • Atomic-layer doping
  • GaAs
  • Isoelectronic traps
  • Photoluminescence (PL)
  • Secondary ion mass spectrometry (SIMS)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.",
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T1 - Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1996/9

Y1 - 1996/9

N2 - We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.

AB - We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.

KW - δ-doping

KW - AlGaAs/GaAs

KW - Atomic-layer doping

KW - GaAs

KW - Isoelectronic traps

KW - Photoluminescence (PL)

KW - Secondary ion mass spectrometry (SIMS)

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