Extremely strong and sharp photoluminescence lines from nitrogen atomic-layer-doped GaAs, AlGaAs and AlGaAs/GaAs single quantum wells

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have performed nitrogen atomic-layer doping into GaAs, AlGaAs, and AlGaAs/GaAs single quantum wells using atomic nitrogen cracked by a hot tungsten filament. While the atomic-layer-doped GaAs layers show a series of sharp and strong photoluminescence lines relating to excitons bound to nitrogen atoms at 8K, atomic-layer-doped AlGaAs layers show several broad nitrogen-related lines. For the atomic-layer-doped single quantum well at the center of the GaAs layer, the quantum well luminescence itself disappears and a dominant and sharp luminescence is observed at a longer wavelength. It is found that the As pressure during the atomic-layer doping greatly affects the luminescence characteristics.

Original languageEnglish
Pages (from-to)1527-1530
Number of pages4
JournalJournal of Electronic Materials
Volume25
Issue number9
DOIs
Publication statusPublished - 1996 Sep

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Keywords

  • AlGaAs/GaAs
  • Atomic-layer doping
  • GaAs
  • Isoelectronic traps
  • Photoluminescence (PL)
  • Secondary ion mass spectrometry (SIMS)
  • δ-doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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