Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The regrowth of p-InGaN as the extrinsic base layer of Npn-type GaN/InGaN heterojunction bipolar transistors (HBTs) significantly improves the ohmic characteristics of the base layer. The specific contact resistance is 7.8 × 10-4 Ω-cm2 even after the dry etching. This value for a non-alloyed ohmic contact is much better than that for as-grown p-GaN (1.7 × 10-3 Ω-cm2) and decreased turn-on voltage in the emitter-base diodes, which results in high current gains of up to 2000 and reduced offset voltages in the GaN/InGaN HBTs. These results show that the p-InGaN extrinsic base regrowth is an effective way to improve nitride HBT characteristics.

Original languageEnglish
Pages (from-to)1922-1924
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
Publication statusPublished - 2004 Apr
Externally publishedYes

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
heterojunctions
Dry etching
Ohmic contacts
Electric potential
electric potential
Contact resistance
contact resistance
Nitrides
nitrides
high current
electric contacts
emitters
Diodes
diodes
etching

Keywords

  • Contact resistance
  • Current gain
  • Diode
  • Extrinsic base
  • HBT
  • MOVPE
  • Offset voltage
  • Ohmic contact
  • P-InGaN
  • Regrowth

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Extrinsic base regrowth of p-InGaN for Npn-type GaN/InGaN heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, Kazuhide; Kobayashi, Naoki.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 4 B, 04.2004, p. 1922-1924.

Research output: Contribution to journalArticle

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N2 - The regrowth of p-InGaN as the extrinsic base layer of Npn-type GaN/InGaN heterojunction bipolar transistors (HBTs) significantly improves the ohmic characteristics of the base layer. The specific contact resistance is 7.8 × 10-4 Ω-cm2 even after the dry etching. This value for a non-alloyed ohmic contact is much better than that for as-grown p-GaN (1.7 × 10-3 Ω-cm2) and decreased turn-on voltage in the emitter-base diodes, which results in high current gains of up to 2000 and reduced offset voltages in the GaN/InGaN HBTs. These results show that the p-InGaN extrinsic base regrowth is an effective way to improve nitride HBT characteristics.

AB - The regrowth of p-InGaN as the extrinsic base layer of Npn-type GaN/InGaN heterojunction bipolar transistors (HBTs) significantly improves the ohmic characteristics of the base layer. The specific contact resistance is 7.8 × 10-4 Ω-cm2 even after the dry etching. This value for a non-alloyed ohmic contact is much better than that for as-grown p-GaN (1.7 × 10-3 Ω-cm2) and decreased turn-on voltage in the emitter-base diodes, which results in high current gains of up to 2000 and reduced offset voltages in the GaN/InGaN HBTs. These results show that the p-InGaN extrinsic base regrowth is an effective way to improve nitride HBT characteristics.

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