Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo; L. Crudgington; H. M H Chong; Y. Tsuchiya; Z. Moktadir; Tsuyoshi Hasegawa; H. Mizuta

doi:10.1016/j.mee.2015.02.047

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo, L. Crudgington, H. M H Chong, Y. Tsuchiya, Z. Moktadir, Tsuyoshi Hasegawa, H. Mizuta

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 10⁵ and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

Original language	English
Pages (from-to)	66-70
Number of pages	5
Journal	Microelectronic Engineering
Volume	145
DOIs	https://doi.org/10.1016/j.mee.2015.02.047
Publication status	Published - 2015 Sep 1
Externally published	Yes

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Keywords

CMOS compatible
Double suspension
Low power
Nanowire
Narrow channel
NEMS

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

Cite this

Boodhoo, L., Crudgington, L., Chong, H. M. H., Tsuchiya, Y., Moktadir, Z., Hasegawa, T., & Mizuta, H. (2015). Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications. Microelectronic Engineering, 145, 66-70. https://doi.org/10.1016/j.mee.2015.02.047

@article{b846958db018413b941ffeb3fceff49f,

title = "Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications",

abstract = "Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.",

keywords = "CMOS compatible, Double suspension, Low power, Nanowire, Narrow channel, NEMS",

author = "L. Boodhoo and L. Crudgington and Chong, {H. M H} and Y. Tsuchiya and Z. Moktadir and Tsuyoshi Hasegawa and H. Mizuta",

year = "2015",

month = sep

day = "1",

doi = "10.1016/j.mee.2015.02.047",

language = "English",

volume = "145",

pages = "66--70",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

TY - JOUR

T1 - Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

AU - Boodhoo, L.

AU - Crudgington, L.

AU - Chong, H. M H

AU - Tsuchiya, Y.

AU - Moktadir, Z.

AU - Hasegawa, Tsuyoshi

AU - Mizuta, H.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

AB - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

KW - CMOS compatible

KW - Double suspension

KW - Low power

KW - Nanowire

KW - Narrow channel

KW - NEMS

UR - http://www.scopus.com/inward/record.url?scp=84925867961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925867961&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.02.047

DO - 10.1016/j.mee.2015.02.047

M3 - Article

AN - SCOPUS:84925867961

VL - 145

SP - 66

EP - 70

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

Access to Document

10.1016/j.mee.2015.02.047