Abstract
Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 66-70 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 145 |
| DOIs | |
| Publication status | Published - 2015 Sep 1 |
Keywords
- CMOS compatible
- Double suspension
- Low power
- NEMS
- Nanowire
- Narrow channel
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Cite this
Boodhoo, L., Crudgington, L., Chong, H. M. H., Tsuchiya, Y., Moktadir, Z., Hasegawa, T., & Mizuta, H. (2015). Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications. Microelectronic Engineering, 145, 66-70. https://doi.org/10.1016/j.mee.2015.02.047