Abstract
Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 66-70 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 145 |
| DOIs | |
| Publication status | Published - 2015 Sep 1 |
| Externally published | Yes |
Fingerprint
Keywords
- CMOS compatible
- Double suspension
- Low power
- Nanowire
- Narrow channel
- NEMS
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications. / Boodhoo, L.; Crudgington, L.; Chong, H. M H; Tsuchiya, Y.; Moktadir, Z.; Hasegawa, Tsuyoshi; Mizuta, H.
In: Microelectronic Engineering, Vol. 145, 01.09.2015, p. 66-70.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications
AU - Boodhoo, L.
AU - Crudgington, L.
AU - Chong, H. M H
AU - Tsuchiya, Y.
AU - Moktadir, Z.
AU - Hasegawa, Tsuyoshi
AU - Mizuta, H.
PY - 2015/9/1
Y1 - 2015/9/1
N2 - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.
AB - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.
KW - CMOS compatible
KW - Double suspension
KW - Low power
KW - Nanowire
KW - Narrow channel
KW - NEMS
UR - http://www.scopus.com/inward/record.url?scp=84925867961&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84925867961&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2015.02.047
DO - 10.1016/j.mee.2015.02.047
M3 - Article
VL - 145
SP - 66
EP - 70
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -