Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo; L. Crudgington; H. M H Chong; Y. Tsuchiya; Z. Moktadir; Tsuyoshi Hasegawa; H. Mizuta

doi:10.1016/j.mee.2015.02.047

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo, L. Crudgington, H. M H Chong, Y. Tsuchiya, Z. Moktadir, Tsuyoshi Hasegawa, H. Mizuta

Research output: Contribution to journal › Article

17 Citations (Scopus)

Abstract

Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 10⁵ and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

Original language	English
Pages (from-to)	66-70
Number of pages	5
Journal	Microelectronic Engineering
Volume	145
DOIs	https://doi.org/10.1016/j.mee.2015.02.047
Publication status	Published - 2015 Sep 1
Externally published	Yes

Keywords

CMOS compatible
Double suspension
Low power
Nanowire
Narrow channel
NEMS

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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Boodhoo, L., Crudgington, L., Chong, H. M. H., Tsuchiya, Y., Moktadir, Z., Hasegawa, T., & Mizuta, H. (2015). Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications. Microelectronic Engineering, 145, 66-70. https://doi.org/10.1016/j.mee.2015.02.047

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abstract = "Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.",

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AU - Boodhoo, L.

AU - Crudgington, L.

AU - Chong, H. M H

AU - Tsuchiya, Y.

AU - Moktadir, Z.

AU - Hasegawa, Tsuyoshi

AU - Mizuta, H.

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AB - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

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