Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo, L. Crudgington, H. M H Chong, Y. Tsuchiya, Z. Moktadir, Tsuyoshi Hasegawa, H. Mizuta

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

Original languageEnglish
Pages (from-to)66-70
Number of pages5
JournalMicroelectronic Engineering
Volume145
DOIs
Publication statusPublished - 2015 Sep 1
Externally publishedYes

Fingerprint

Silicon
Nanowires
nanowires
switches
Switches
Fabrication
fabrication
silicon
difluorides
Xenon
Current voltage characteristics
Amorphous silicon
Threshold voltage
threshold voltage
xenon
amorphous silicon
Etching
CMOS
Suspensions
depletion

Keywords

  • CMOS compatible
  • Double suspension
  • Low power
  • Nanowire
  • Narrow channel
  • NEMS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications. / Boodhoo, L.; Crudgington, L.; Chong, H. M H; Tsuchiya, Y.; Moktadir, Z.; Hasegawa, Tsuyoshi; Mizuta, H.

In: Microelectronic Engineering, Vol. 145, 01.09.2015, p. 66-70.

Research output: Contribution to journalArticle

@article{b846958db018413b941ffeb3fceff49f,
title = "Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications",
abstract = "Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.",
keywords = "CMOS compatible, Double suspension, Low power, Nanowire, Narrow channel, NEMS",
author = "L. Boodhoo and L. Crudgington and Chong, {H. M H} and Y. Tsuchiya and Z. Moktadir and Tsuyoshi Hasegawa and H. Mizuta",
year = "2015",
month = "9",
day = "1",
doi = "10.1016/j.mee.2015.02.047",
language = "English",
volume = "145",
pages = "66--70",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

AU - Boodhoo, L.

AU - Crudgington, L.

AU - Chong, H. M H

AU - Tsuchiya, Y.

AU - Moktadir, Z.

AU - Hasegawa, Tsuyoshi

AU - Mizuta, H.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

AB - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

KW - CMOS compatible

KW - Double suspension

KW - Low power

KW - Nanowire

KW - Narrow channel

KW - NEMS

UR - http://www.scopus.com/inward/record.url?scp=84925867961&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925867961&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2015.02.047

DO - 10.1016/j.mee.2015.02.047

M3 - Article

VL - 145

SP - 66

EP - 70

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -