Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo; L. Crudgington; H. M.H. Chong; Y. Tsuchiya; Z. Moktadir; T. Hasegawa; H. Mizuta

doi:10.1016/j.mee.2015.02.047

Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo^*, L. Crudgington, H. M.H. Chong, Y. Tsuchiya, Z. Moktadir, T. Hasegawa, H. Mizuta

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 10⁵ and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

Original language	English
Pages (from-to)	66-70
Number of pages	5
Journal	Microelectronic Engineering
Volume	145
DOIs	https://doi.org/10.1016/j.mee.2015.02.047
Publication status	Published - 2015 Sep 1
Externally published	Yes

Keywords

CMOS compatible
Double suspension
Low power
NEMS
Nanowire
Narrow channel

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2015.02.047

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Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications. / Boodhoo, L.; Crudgington, L.; Chong, H. M.H.; Tsuchiya, Y.; Moktadir, Z.; Hasegawa, T.; Mizuta, H.

In: Microelectronic Engineering, Vol. 145, 01.09.2015, p. 66-70.

Research output: Contribution to journal › Article › peer-review

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title = "Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications",

abstract = "Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.",

keywords = "CMOS compatible, Double suspension, Low power, NEMS, Nanowire, Narrow channel",

author = "L. Boodhoo and L. Crudgington and Chong, {H. M.H.} and Y. Tsuchiya and Z. Moktadir and T. Hasegawa and H. Mizuta",

note = "Funding Information: This research is conducted under financial support from the EPSRC - JST strategic Japan UK cooperative program NOVTLOS project EP/J000469/1 . Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

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doi = "10.1016/j.mee.2015.02.047",

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AU - Boodhoo, L.

AU - Crudgington, L.

AU - Chong, H. M.H.

AU - Tsuchiya, Y.

AU - Moktadir, Z.

AU - Hasegawa, T.

AU - Mizuta, H.

N1 - Funding Information: This research is conducted under financial support from the EPSRC - JST strategic Japan UK cooperative program NOVTLOS project EP/J000469/1 . Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

AB - Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

KW - CMOS compatible

KW - Double suspension

KW - Low power

KW - NEMS

KW - Nanowire

KW - Narrow channel

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JF - Microelectronic Engineering

SN - 0167-9317

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Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

Abstract

Keywords

ASJC Scopus subject areas

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