Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

L. Boodhoo, L. Crudgington, H. M H Chong, Y. Tsuchiya, Z. Moktadir, Tsuyoshi Hasegawa, H. Mizuta

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Suspended silicon nanowires with narrow (∼10 nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current-voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of -1.8 V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.

Original languageEnglish
Pages (from-to)66-70
Number of pages5
JournalMicroelectronic Engineering
Volume145
DOIs
Publication statusPublished - 2015 Sep 1
Externally publishedYes

Keywords

  • CMOS compatible
  • Double suspension
  • Low power
  • Nanowire
  • Narrow channel
  • NEMS

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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