Fabrication and characterization of a silicon capacitive structure for simultaneous detection of acceleration and angular rate

Jun Mizuno, Kay Nottmeyer, Cleopatra Cabuz, Takashi Kobayashi, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

A silicon micromachined structure 1 cm × 2 cm in size was designed and fabricated, which can detect linear acceleration g and angular rate ω simultaneously and independently. This is accomplished by capacitive detection of a) the displacement due to acceleration and b) the tilt due to centrifugal forces of two seismic masses symmetrically suspended by torsion bars. The ratio of the respective sensitivities to acceleration g and angular rate ω can be adjusted through the dimensions and the shape of the torsion bars.

Original languageEnglish
Title of host publicationInternational Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages679-682
Number of pages4
Volume2
Publication statusPublished - 1995
Externally publishedYes
EventProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2) - Stockholm, Sweden
Duration: 1995 Jun 251995 Jun 29

Other

OtherProceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2)
CityStockholm, Sweden
Period95/6/2595/6/29

Fingerprint

Fabrication
Silicon
Torsional stress

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mizuno, J., Nottmeyer, K., Cabuz, C., Kobayashi, T., & Esashi, M. (1995). Fabrication and characterization of a silicon capacitive structure for simultaneous detection of acceleration and angular rate. In International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings (Vol. 2, pp. 679-682). Piscataway, NJ, United States: IEEE.

Fabrication and characterization of a silicon capacitive structure for simultaneous detection of acceleration and angular rate. / Mizuno, Jun; Nottmeyer, Kay; Cabuz, Cleopatra; Kobayashi, Takashi; Esashi, Masayoshi.

International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings. Vol. 2 Piscataway, NJ, United States : IEEE, 1995. p. 679-682.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mizuno, J, Nottmeyer, K, Cabuz, C, Kobayashi, T & Esashi, M 1995, Fabrication and characterization of a silicon capacitive structure for simultaneous detection of acceleration and angular rate. in International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings. vol. 2, IEEE, Piscataway, NJ, United States, pp. 679-682, Proceedings of the 1995 8th International Conference on Solid-State Sensors and Actuators and Eurosensors IX. Part 1 (of 2), Stockholm, Sweden, 95/6/25.
Mizuno J, Nottmeyer K, Cabuz C, Kobayashi T, Esashi M. Fabrication and characterization of a silicon capacitive structure for simultaneous detection of acceleration and angular rate. In International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings. Vol. 2. Piscataway, NJ, United States: IEEE. 1995. p. 679-682
Mizuno, Jun ; Nottmeyer, Kay ; Cabuz, Cleopatra ; Kobayashi, Takashi ; Esashi, Masayoshi. / Fabrication and characterization of a silicon capacitive structure for simultaneous detection of acceleration and angular rate. International Conference on Solid-State Sensors and Actuators, and Eurosensors IX, Proceedings. Vol. 2 Piscataway, NJ, United States : IEEE, 1995. pp. 679-682
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