For development of a spin-filtering device with a ferromagnetic barrier, very thin Co-ferrite layers are prepared by the plasma oxidization of the CoFe2 surface deposited on MgO(001) single crystal substrates and postannealing process. Spin-filtering junctions consisting of CoFe 2/(MgO/)Co-ferrite/Ta are fabricated and exhibit nonlinear J-V curves. By the insertion of a MgO layer, clear independent rotation of two magnetic moments is observed.
- Spin-filtering devices
- Spin-polarized current sources
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering