Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

S. Kobayashi, T. Takenobu, S. Mon, A. Fujiwara, Y. Iwasa

Research output: Contribution to journalArticle

228 Citations (Scopus)

Abstract

Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.

Original languageEnglish
Pages (from-to)4581-4583
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number25
DOIs
Publication statusPublished - 2003 Jun 23
Externally publishedYes

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transistors
fabrication
thin films
high vacuum
grain size

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Fabrication and characterization of C60 thin-film transistors with high field-effect mobility. / Kobayashi, S.; Takenobu, T.; Mon, S.; Fujiwara, A.; Iwasa, Y.

In: Applied Physics Letters, Vol. 82, No. 25, 23.06.2003, p. 4581-4583.

Research output: Contribution to journalArticle

Kobayashi, S, Takenobu, T, Mon, S, Fujiwara, A & Iwasa, Y 2003, 'Fabrication and characterization of C60 thin-film transistors with high field-effect mobility', Applied Physics Letters, vol. 82, no. 25, pp. 4581-4583. https://doi.org/10.1063/1.1577383
Kobayashi, S. ; Takenobu, T. ; Mon, S. ; Fujiwara, A. ; Iwasa, Y. / Fabrication and characterization of C60 thin-film transistors with high field-effect mobility. In: Applied Physics Letters. 2003 ; Vol. 82, No. 25. pp. 4581-4583.
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