Fabrication and characterization of C60 thin-film transistors with high field-effect mobility

S. Kobayashi, T. Takenobu, S. Mon, A. Fujiwara, Y. Iwasa

Research output: Contribution to journalArticle

231 Citations (Scopus)

Abstract

Fabrication and characterization of C60 thin-film transistors (TFT) with high field-effect mobility were reported. It was shown that n-type high mobility of 0.5 cm2/V was achieved in C60 TFT. Results showed that the high vacuum is more crucial for the high mobility rather than the grain size.

Original languageEnglish
Pages (from-to)4581-4583
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number25
DOIs
Publication statusPublished - 2003 Jun 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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