Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer

Masahiro Itoh, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingChapter

    32 Citations (Scopus)

    Abstract

    Metal-semiconductor field-effect transistors (MESFETs) have been fabricated using the p-type surface-conductive layer of undoped homoepitaxial diamond film on the surface. The layers have been employed as the channel of MESFETs. Since the surface-conductive layer is ultrathin, the depletion region has already closed the surface-conductive channel at the gate voltage of O V, i.e., these MESFETs exhibit the enhancement mode (normally off-mode). The threshold voltages are -1.6 V and -0.7 V in the case of Al and Pb gate respectively. These MESFETs also exhibit channel pinch-off and complete saturation of drain current, and high transconductance of 2.5 mS/mm at room temperature. This value is the highest of all diamond FETs at present, enhancement/resistor (E/R) inverters with the enhancement mode transistor and resistor, and direct coupled enhancement/enhancement (E/E) inverters with the two enhancement mode transistors have been also fabricated. This E/R inverter exhibits high voltage gain. For a E/E inverter, the voltage gain has also been measured as a function of frequency. The high 3-dB frequency (fH) is above 2 MHz. The voltage gain at frequency = (Hz) is equal to 1√2 the voltage gain at frequency = O (Hz).

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    Place of PublicationMinato-ku, Japan
    PublisherJJAP
    Pages4677-4681
    Number of pages5
    Volume34
    Edition9 A
    Publication statusPublished - 1995 Sep

    Fingerprint

    MESFET devices
    Diamonds
    Fabrication
    Resistors
    Electric potential
    Transistors
    Drain current
    Diamond films
    Transconductance
    Field effect transistors
    Threshold voltage

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Itoh, M., & Kawarada, H. (1995). Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (9 A ed., Vol. 34, pp. 4677-4681). Minato-ku, Japan: JJAP.

    Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. / Itoh, Masahiro; Kawarada, Hiroshi.

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 9 A. ed. Minato-ku, Japan : JJAP, 1995. p. 4677-4681.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Itoh, M & Kawarada, H 1995, Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A edn, vol. 34, JJAP, Minato-ku, Japan, pp. 4677-4681.
    Itoh M, Kawarada H. Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 9 A ed. Vol. 34. Minato-ku, Japan: JJAP. 1995. p. 4677-4681
    Itoh, Masahiro ; Kawarada, Hiroshi. / Fabrication and characterization of metal-semiconductor field-effect transistor utilizing diamond surface-conductive layer. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 9 A. ed. Minato-ku, Japan : JJAP, 1995. pp. 4677-4681
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