Fabrication and characterization of poly(3-hexylthiophene)-based field-effect transistors with silsesquioxane gate insulators

Kenji Tomatsu*, Takashi Hamada, Takashi Nagase, Saori Yamazaki, Takashi Kobayashi, Shuichi Murakami, Kimihiro Matsukawa, Hiroyoshi Naito

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The preparation of organic-inorganic hybrid gate dielectrics of poly(methyl silsesquioxane) (PMSQ) at a low processing temperature has been studied for use in organic field-effect transistors (OFETs) by the solution process. It is found that the electrical resistivity of a PMSQ film synthesized by a sol-gel method is significantly influenced by the synthesis conditions such as the type of organic solvent used and water content. PMSQ films prepared in toluene show a high resistivity of over 1014Ωcm even at a low thermal treatment of 150°C, which is attributed to the decrease in the silanol concentration of the PMSQ films. Top-contact OFET fabricated on a PMSQ-coated SiO2 gate dielectric using poly(3-hexylthiophene) exhibits mobility improvement similarly to devices with self-assembled monolayer-modified SiO 2 dielectrics.

Original languageEnglish
Pages (from-to)3196-3199
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25
Externally publishedYes

Keywords

  • Gate insulator
  • Organic field-effect transistor
  • Organic-inorganic hybrid dielectric
  • Poly(3-hexylthiophene)
  • Poly(methyl silsesquioxane)

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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