Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT: PCBM organic materials

Hideo Kaiju, Kenji Kondo, Nubla Basheer, Nobuyoshi Kawaguchi, Susanne White, Akihiko Hirata, Manabu Ishimaru, Yoshihiko Hirotsu, Akira Ishibashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have proposed spin quantum cross (SQC) devices, in which organic materials are sandwiched between two edges of magnetic thin films whose edges are crossed, towards the realization of novel beyond-CMOS switching devices. In SQC devices, nanometer-size junctions can be produced since the junction area is determined by the film thickness. In this study, we have fabricated Ni SQC devices with poly-3-hexylthiophene (P3HT): 6, 6-phenyl C61-butyric acid methyl ester (PCBM) organic materials and investigated the current-voltage (I-V) characteristics experimentally and theoretically. As a result of I-V measurements, ohmic I-V characteristics have been obtained at room temperature for Ni SQC devices with P3HT:PCBM organic materials, where the junction area is as small as 16 nm x 16 nm. This experimental result shows quantitative agreement with the theoretical calculation results performed within the framework of the Anderson model under the strong coupling limit. Our calculation also shows that a high onZoff ratio beyond 10000:1 can be obtained in Ni SQC devices with P3HT:PCBM organic materials under the weak coupling condition.

Original languageEnglish
Title of host publicationMaterials and Devices for End-of-Roadmap and Beyond CMOS Scaling
Pages133-138
Number of pages6
Volume1252
Publication statusPublished - 2010 Dec 1
Externally publishedYes
Event2010 MRS Spring Meeting - San Francisco, CA
Duration: 2010 Apr 52010 Apr 9

Other

Other2010 MRS Spring Meeting
CitySan Francisco, CA
Period10/4/510/4/9

Fingerprint

Butyric acid
butyric acid
Current voltage characteristics
organic materials
esters
Esters
Fabrication
fabrication
electric potential
Magnetic thin films
Voltage measurement
Electric current measurement
Film thickness
electrical measurement
poly(3-hexylthiophene)
(6,6)-phenyl C61-butyric acid methyl ester
CMOS
film thickness
room temperature
thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kaiju, H., Kondo, K., Basheer, N., Kawaguchi, N., White, S., Hirata, A., ... Ishibashi, A. (2010). Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT: PCBM organic materials. In Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling (Vol. 1252, pp. 133-138)

Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT : PCBM organic materials. / Kaiju, Hideo; Kondo, Kenji; Basheer, Nubla; Kawaguchi, Nobuyoshi; White, Susanne; Hirata, Akihiko; Ishimaru, Manabu; Hirotsu, Yoshihiko; Ishibashi, Akira.

Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Vol. 1252 2010. p. 133-138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kaiju, H, Kondo, K, Basheer, N, Kawaguchi, N, White, S, Hirata, A, Ishimaru, M, Hirotsu, Y & Ishibashi, A 2010, Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT: PCBM organic materials. in Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. vol. 1252, pp. 133-138, 2010 MRS Spring Meeting, San Francisco, CA, 10/4/5.
Kaiju H, Kondo K, Basheer N, Kawaguchi N, White S, Hirata A et al. Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT: PCBM organic materials. In Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Vol. 1252. 2010. p. 133-138
Kaiju, Hideo ; Kondo, Kenji ; Basheer, Nubla ; Kawaguchi, Nobuyoshi ; White, Susanne ; Hirata, Akihiko ; Ishimaru, Manabu ; Hirotsu, Yoshihiko ; Ishibashi, Akira. / Fabrication and current-voltage characteristics of Ni spin quantum cross devices with P3HT : PCBM organic materials. Materials and Devices for End-of-Roadmap and Beyond CMOS Scaling. Vol. 1252 2010. pp. 133-138
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