Fabrication and packaging of a resonant infrared sensor integrated in silicon

C. Cabuz, Shuichi Shoji, K. Fukatsu, E. Cabuz, K. Minami, M. Esashi

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.

Original languageEnglish
Pages (from-to)92-99
Number of pages8
JournalSensors and Actuators: A. Physical
Volume43
Issue number1-3
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Silicon
packaging
Packaging
Infrared radiation
Fabrication
fabrication
sensors
Sensors
infrared radiation
silicon
micromachining
floating
resonators
Micromachining
wafers
electrostatics
silicon dioxide
Silicon Dioxide
Resonators
Electrostatics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

Fabrication and packaging of a resonant infrared sensor integrated in silicon. / Cabuz, C.; Shoji, Shuichi; Fukatsu, K.; Cabuz, E.; Minami, K.; Esashi, M.

In: Sensors and Actuators: A. Physical, Vol. 43, No. 1-3, 1994, p. 92-99.

Research output: Contribution to journalArticle

Cabuz, C. ; Shoji, Shuichi ; Fukatsu, K. ; Cabuz, E. ; Minami, K. ; Esashi, M. / Fabrication and packaging of a resonant infrared sensor integrated in silicon. In: Sensors and Actuators: A. Physical. 1994 ; Vol. 43, No. 1-3. pp. 92-99.
@article{5e25a5be6aa949d983fcb5e9fc08abe0,
title = "Fabrication and packaging of a resonant infrared sensor integrated in silicon",
abstract = "A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.",
author = "C. Cabuz and Shuichi Shoji and K. Fukatsu and E. Cabuz and K. Minami and M. Esashi",
year = "1994",
doi = "10.1016/0924-4247(93)00671-P",
language = "English",
volume = "43",
pages = "92--99",
journal = "Sensors and Actuators, A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - Fabrication and packaging of a resonant infrared sensor integrated in silicon

AU - Cabuz, C.

AU - Shoji, Shuichi

AU - Fukatsu, K.

AU - Cabuz, E.

AU - Minami, K.

AU - Esashi, M.

PY - 1994

Y1 - 1994

N2 - A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.

AB - A novel integrated infrared (IR) sensor is described that incorporates a resonant silicon/silicon dioxide microbridge. The resonance frequency of the microbridge is sensitive to the incident IR power as a result of the thermally induced stress variation resulting from the absorption of the IR radiation. A merged process including on-wafer stress-free packaging, NMOS circuitry and bulk silicon micromachining is illustrated. One-port electrostatic excitation and capacitive detection was used, the resonator being electrically floating. Relative responsitivities of 450 ppm/μW of absorbed power were obtained.

UR - http://www.scopus.com/inward/record.url?scp=0028430492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028430492&partnerID=8YFLogxK

U2 - 10.1016/0924-4247(93)00671-P

DO - 10.1016/0924-4247(93)00671-P

M3 - Article

VL - 43

SP - 92

EP - 99

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

SN - 0924-4247

IS - 1-3

ER -