Abstract
SrLaVMoO6 thin films have been grown on various substrates by magnetron sputtering in ArH2 mixture gas. High-quality c-axis oriented SrLaVMoO6 films have been obtained in the growth temperature of 630 C and Ar 5 H2 mixture gas. The SrLaVMoO6 films showed low resistive metallic behavior, which is comparable to bulk SrLaVMoO6. X-ray photoemission spectroscopy measurements indicate that the dominant valence state for Mo and V in the SrLaVMoO6 films is tetravalent (Mo4) and trivalent state (V3), respectively.
Original language | English |
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Article number | 07E321 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2011 Apr 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)