Fabrication and Temperature Characteristics of 1550nm InAs/InGaAlAs Quantum Dot Distributed Feedback Lasers with Side Grating

R. Kaneko, R. Katsuhara, R. Yabuki, A. Matsumoto, K. Akahane, Y. Matsushima, Hiroshi Ishikawa, K. Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Distributed feedback (DFB) lasers with side gratings were fabricated by a novel method of two step etching using 1550nm InAs/InGaAlAs quantum dot (QD) wafers grown on InP(311)B substrates with strain compensation technique, and room temperature continuous wave (CW) single-mode operation with a side mode suppression ratio (SMSR) of 39 dB was achieved by AR/HR facet coating. The threshold current density was 2.33 kA/cm2, and high temperature operation up to 80 °C was also achieved without heat dissipation treatment. The characteristic temperature coefficient was 113 K, and the wavelength shift was 0.05 nm/K.

Original languageEnglish
Title of host publication2022 Compound Semiconductor Week, CSW 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665453400
DOIs
Publication statusPublished - 2022
Event2022 Compound Semiconductor Week, CSW 2022 - Ann Arbor, United States
Duration: 2022 Jun 12022 Jun 3

Publication series

Name2022 Compound Semiconductor Week, CSW 2022

Conference

Conference2022 Compound Semiconductor Week, CSW 2022
Country/TerritoryUnited States
CityAnn Arbor
Period22/6/122/6/3

Keywords

  • 1550nm-band Qauntum Dot
  • DFB lasers
  • High temperature operation
  • Single-wavelength oscillation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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