Fabrication of 0.1 μm channel diamond metal-insulator-semiconductor field-effect transistor

Hitoshi Umezawa, Yoshikazu Ohba, Hiroaki Ishizaka, Takuya Arima, Hirotada Taniuchi, Minoru Tachiki, Hiroshi Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Analysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope 5 by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 μm FET with thin gate insulator 15 nm in thickness.

Original languageEnglish
Title of host publicationWide-Bandgap Electronics
PublisherMaterials Research Society
Pages220-225
Number of pages6
ISBN (Print)1558996168, 9781558996168
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event2001 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2001 Apr 162001 Apr 20

Publication series

NameMaterials Research Society Symposium Proceedings
Volume680
ISSN (Print)0272-9172

Conference

Conference2001 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period01/4/1601/4/20

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Umezawa, H., Ohba, Y., Ishizaka, H., Arima, T., Taniuchi, H., Tachiki, M., & Kawarada, H. (2001). Fabrication of 0.1 μm channel diamond metal-insulator-semiconductor field-effect transistor. In Wide-Bandgap Electronics (pp. 220-225). (Materials Research Society Symposium Proceedings; Vol. 680). Materials Research Society. https://doi.org/10.1557/proc-680-e8.2