Fabrication of 0.1 μm channel diamond metal-insulator-semiconductor field-effect transistor

Hitoshi Umezawa, Yoshikazu Ohba, Hiroaki Ishizaka, Takuya Arima, Hirotada Taniuchi, Minoru Tachiki, Hiroshi Kawarada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)


Analysis of diamond short channel effect is carried out for the first time. 70 nm channel diamond metal-insulator semiconductor field-effect transistor is realized by utilizing new FET fabrication process on the hydrogen-terminated surface conductive layer. This FET is the shortest gate length in diamond FETs. FETs with thick gate insulator of 35 nm show significant threshold voltage shift and degradation of subthreshold slope 5 by the gate refining. This phenomenon occurs due to the penetration of drain field into channel. However, the degradation of subthreshold performance and threshold voltage shift are hardly observed in 0.17 μm FET with thin gate insulator 15 nm in thickness.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
Number of pages6
Publication statusPublished - 2001
Externally publishedYes
Event2001 MRS Spring Meeting - San Francisco, CA
Duration: 2001 Apr 162001 Apr 20


Other2001 MRS Spring Meeting
CitySan Francisco, CA


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Umezawa, H., Ohba, Y., Ishizaka, H., Arima, T., Taniuchi, H., Tachiki, M., & Kawarada, H. (2001). Fabrication of 0.1 μm channel diamond metal-insulator-semiconductor field-effect transistor. In Materials Research Society Symposium Proceedings (Vol. 680, pp. 220-225)