Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process

Hitoshi Umezawa, Kenich Kitatani, Kengo Kinumura, Nobuyuki Seto, Kazuo Tsugawa, Hiroshi Kawarada

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)151-153
Number of pages3
JournalNew Diamond and Frontier Carbon Technology
Volume9
Issue number2
Publication statusPublished - 1999 Dec 1

Keywords

  • Diamond
  • MESFET
  • Self-aligned gate process

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Umezawa, H., Kitatani, K., Kinumura, K., Seto, N., Tsugawa, K., & Kawarada, H. (1999). Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process. New Diamond and Frontier Carbon Technology, 9(2), 151-153.