Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process

Hitoshi Umezawa, Kenich Kitatani, Kengo Kinumura, Nobuyuki Seto, Kazuo Tsugawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    Original languageEnglish
    Pages (from-to)151-153
    Number of pages3
    JournalNew Diamond and Frontier Carbon Technology
    Volume9
    Issue number2
    Publication statusPublished - 1999

    Fingerprint

    Field effect transistors
    Diamonds
    field effect transistors
    diamonds
    Fabrication
    fabrication

    Keywords

    • Diamond
    • MESFET
    • Self-aligned gate process

    ASJC Scopus subject areas

    • Materials Science(all)
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Umezawa, H., Kitatani, K., Kinumura, K., Seto, N., Tsugawa, K., & Kawarada, H. (1999). Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process. New Diamond and Frontier Carbon Technology, 9(2), 151-153.

    Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process. / Umezawa, Hitoshi; Kitatani, Kenich; Kinumura, Kengo; Seto, Nobuyuki; Tsugawa, Kazuo; Kawarada, Hiroshi.

    In: New Diamond and Frontier Carbon Technology, Vol. 9, No. 2, 1999, p. 151-153.

    Research output: Contribution to journalArticle

    Umezawa, H, Kitatani, K, Kinumura, K, Seto, N, Tsugawa, K & Kawarada, H 1999, 'Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process', New Diamond and Frontier Carbon Technology, vol. 9, no. 2, pp. 151-153.
    Umezawa, Hitoshi ; Kitatani, Kenich ; Kinumura, Kengo ; Seto, Nobuyuki ; Tsugawa, Kazuo ; Kawarada, Hiroshi. / Fabrication of 1 μm Gate Diamond FET Using Self-Aligned Gate Process. In: New Diamond and Frontier Carbon Technology. 1999 ; Vol. 9, No. 2. pp. 151-153.
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    AU - Seto, Nobuyuki

    AU - Tsugawa, Kazuo

    AU - Kawarada, Hiroshi

    PY - 1999

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