Fabrication of 3D a-Si/SiO2 photonic crystals on 2D sub-micron-patterned InP substrates

Tetsuro Segawa; Katsuyuki Utaka; Mitsuru Naganuma; Hisashi Sato; Shojiro Kawakami; Masayuki Izutsu; Masashi Nakao

Fabrication of 3D a-Si/SiO₂ photonic crystals on 2D sub-micron-patterned InP substrates

Tetsuro Segawa^*, Katsuyuki Utaka, Mitsuru Naganuma, Hisashi Sato, Shojiro Kawakami, Masayuki Izutsu, Masashi Nakao

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have fabricated three-dimensional (3D) periodic structures consisting of stacked a-Si/SiO₂ layers directly on two-dimensional (2D) sub-micron-patterned (100)-InP substrates by using autocloning technology. The initial 2D pattern has been reflected in the 3D periodic structures, whose height has been amplified. We have measured the transmission and reflection spectra of the 3D periodic structures, and have observed the photonic band gaps in the wavelength region of around 1400 to 2200 nm. We have also observed strong polarization dependency for the samples with the triangular lattice and week dependency for those of the square case.

Original language	English
Pages (from-to)	561-564
Number of pages	4
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication status	Published - 2002 Jan 1
Event	14th Indium Phosphide and Related Materials Conference - Stockholm, Sweden Duration: 2002 May 12 → 2002 May 16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Fabrication of 3D a-Si/SiO2 photonic crystals on 2D sub-micron-patterned InP substrates",

abstract = "We have fabricated three-dimensional (3D) periodic structures consisting of stacked a-Si/SiO2 layers directly on two-dimensional (2D) sub-micron-patterned (100)-InP substrates by using autocloning technology. The initial 2D pattern has been reflected in the 3D periodic structures, whose height has been amplified. We have measured the transmission and reflection spectra of the 3D periodic structures, and have observed the photonic band gaps in the wavelength region of around 1400 to 2200 nm. We have also observed strong polarization dependency for the samples with the triangular lattice and week dependency for those of the square case.",

author = "Tetsuro Segawa and Katsuyuki Utaka and Mitsuru Naganuma and Hisashi Sato and Shojiro Kawakami and Masayuki Izutsu and Masashi Nakao",

year = "2002",

month = jan,

day = "1",

language = "English",

pages = "561--564",

journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

issn = "1092-8669",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "14th Indium Phosphide and Related Materials Conference ; Conference date: 12-05-2002 Through 16-05-2002",

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TY - JOUR

T1 - Fabrication of 3D a-Si/SiO2 photonic crystals on 2D sub-micron-patterned InP substrates

AU - Segawa, Tetsuro

AU - Utaka, Katsuyuki

AU - Naganuma, Mitsuru

AU - Sato, Hisashi

AU - Kawakami, Shojiro

AU - Izutsu, Masayuki

AU - Nakao, Masashi

PY - 2002/1/1

Y1 - 2002/1/1

N2 - We have fabricated three-dimensional (3D) periodic structures consisting of stacked a-Si/SiO2 layers directly on two-dimensional (2D) sub-micron-patterned (100)-InP substrates by using autocloning technology. The initial 2D pattern has been reflected in the 3D periodic structures, whose height has been amplified. We have measured the transmission and reflection spectra of the 3D periodic structures, and have observed the photonic band gaps in the wavelength region of around 1400 to 2200 nm. We have also observed strong polarization dependency for the samples with the triangular lattice and week dependency for those of the square case.

AB - We have fabricated three-dimensional (3D) periodic structures consisting of stacked a-Si/SiO2 layers directly on two-dimensional (2D) sub-micron-patterned (100)-InP substrates by using autocloning technology. The initial 2D pattern has been reflected in the 3D periodic structures, whose height has been amplified. We have measured the transmission and reflection spectra of the 3D periodic structures, and have observed the photonic band gaps in the wavelength region of around 1400 to 2200 nm. We have also observed strong polarization dependency for the samples with the triangular lattice and week dependency for those of the square case.

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M3 - Conference article

AN - SCOPUS:0036051299

SN - 1092-8669

SP - 561

EP - 564

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 14th Indium Phosphide and Related Materials Conference

Y2 - 12 May 2002 through 16 May 2002

ER -

Fabrication of 3D a-Si/SiO₂ photonic crystals on 2D sub-micron-patterned InP substrates

Abstract

ASJC Scopus subject areas

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