Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

Tomohiro Kita, D. Chiba, Y. Ohno, H. Ohno

Research output: Contribution to journalArticle

Abstract

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

Original languageEnglish
Pages (from-to)1930-1932
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number6
DOIs
Publication statusPublished - 2008 Apr 1
Externally publishedYes

Fingerprint

Semiconductor quantum dots
quantum dots
insulators
Resonant tunneling diodes
Fabrication
resonant tunneling diodes
fabrication
Atomic layer deposition
Electrons
atomic layer epitaxy
Nanostructures
leakage
electrons
Semiconductor materials
Electrodes
electrodes
air
Processing
Air
Temperature

Keywords

  • ALD
  • InGaAs
  • MOS
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator. / Kita, Tomohiro; Chiba, D.; Ohno, Y.; Ohno, H.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 40, No. 6, 01.04.2008, p. 1930-1932.

Research output: Contribution to journalArticle

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