Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator

T. Kita, D. Chiba, Y. Ohno, H. Ohno

Research output: Contribution to journalArticle

Abstract

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In0.56Ga0.44As resonant tunneling diode structure with an Al2O3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This gated quantum dot device allows us to control the number of electrons from zero to a few dozen without leakage problem. We describe the processing techniques and the characteristics of the low-temperature transport.

Original languageEnglish
Pages (from-to)1930-1932
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number6
DOIs
Publication statusPublished - 2008 Apr 1
Externally publishedYes

Keywords

  • ALD
  • InGaAs
  • MOS
  • Quantum dot

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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