Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding

Kazuya Nomura, Jun Mizuno, Akiko Okada, Shuichi Shoji, Toshinori Ogashiwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We propose a novel fabrication methodology for a hermetic sealing device using O<inf>2</inf> plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O<inf>2</inf> plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.

Original languageEnglish
Title of host publicationICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages444-447
Number of pages4
ISBN (Print)9784904090138
DOIs
Publication statusPublished - 2015 May 20
Event2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015 - Kyoto, Japan
Duration: 2015 Apr 142015 Apr 17

Other

Other2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
CountryJapan
CityKyoto
Period15/4/1415/4/17

Fingerprint

Glass bonding
Fabrication
Glass
Silicon
Temperature
Acoustic microscopes
Plasmas
Wet etching
Masks
Etching
Scanning
Substrates

Keywords

  • glass-to-glass structure
  • hermetic sealing
  • HF wet etching
  • I-Si/glass bonding
  • low temperature bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Nomura, K., Mizuno, J., Okada, A., Shoji, S., & Ogashiwa, T. (2015). Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (pp. 444-447). [7111054] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP-IAAC.2015.7111054

Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. / Nomura, Kazuya; Mizuno, Jun; Okada, Akiko; Shoji, Shuichi; Ogashiwa, Toshinori.

ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. p. 444-447 7111054.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nomura, K, Mizuno, J, Okada, A, Shoji, S & Ogashiwa, T 2015, Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. in ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference., 7111054, Institute of Electrical and Electronics Engineers Inc., pp. 444-447, 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015, Kyoto, Japan, 15/4/14. https://doi.org/10.1109/ICEP-IAAC.2015.7111054
Nomura K, Mizuno J, Okada A, Shoji S, Ogashiwa T. Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. In ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc. 2015. p. 444-447. 7111054 https://doi.org/10.1109/ICEP-IAAC.2015.7111054
Nomura, Kazuya ; Mizuno, Jun ; Okada, Akiko ; Shoji, Shuichi ; Ogashiwa, Toshinori. / Fabrication of a hermetic sealing device using low temperature intrinsic-silicon/glass bonding. ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 444-447
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AB - We propose a novel fabrication methodology for a hermetic sealing device using O2 plasma-assisted low temperature bonding technique of I-Si and glass. Glass substrates were used as cap and base wafers, while I-Si was selectively applied to the contact surface of the cap wafer as an interlayer. A cavity of above 180 μm in depth was formed in the cap glass by means of wet etching using double layer (photo resist/ I-Si) etching mask. I-Si/glass bonding was conducted at 200 °C through the use of I-Si layer-covered glass wafer and bare glass wafer. A tensile test revealed that bonding strength was drastically increased by using O2 plasma treatment. In addition, scanning acoustic microscope (SAM) observation showed that I-Si/glass bonding was successfully achieved without significant voids. From these results, we believe that the proposed method will be a highly promising technology for future functional hermetic sealing devices.

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