Abstract
A double tubed coaxial line type microwave plasma CVD system has been developed for a-Si:H film deposition using hydrogen and argon gases with pure SiH//4 gas as the material gas. The film quality was evaluated as a function of the plasma condition. A high-quality film can be fabricated under hydrogen plasma because a large amount of hydrogen radicals covers the film surface, thereby causing a thermal structural relaxation of silane radicals. This relaxation results when the silane radicals increase their surface mobility after the soft landing on the film surface.
| Original language | English |
|---|---|
| Pages (from-to) | 73-84 |
| Number of pages | 12 |
| Journal | Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) |
| Volume | 70 |
| Issue number | 11 |
| Publication status | Published - 1987 Nov |
ASJC Scopus subject areas
- Electrical and Electronic Engineering