FABRICATION OF a-Si: H FILMS BY COAXIAL LINE TYPE MICROWAVE HYDROGEN PLASMA CVD.

Isamu Kato, Tetsuya Ueda, Kazuhisa Hatanaka

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A double tubed coaxial line type microwave plasma CVD system has been developed for a-Si:H film deposition using hydrogen and argon gases with pure SiH//4 gas as the material gas. The film quality was evaluated as a function of the plasma condition. A high-quality film can be fabricated under hydrogen plasma because a large amount of hydrogen radicals covers the film surface, thereby causing a thermal structural relaxation of silane radicals. This relaxation results when the silane radicals increase their surface mobility after the soft landing on the film surface.

Original languageEnglish
Pages (from-to)73-84
Number of pages12
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Volume70
Issue number11
Publication statusPublished - 1987 Nov

Fingerprint

Plasma CVD
hydrogen plasma
Microwaves
vapor deposition
microwaves
Hydrogen
Silanes
silanes
Gases
gases
soft landing
Plasmas
Structural relaxation
hydrogen
Landing
Argon
argon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

FABRICATION OF a-Si : H FILMS BY COAXIAL LINE TYPE MICROWAVE HYDROGEN PLASMA CVD. / Kato, Isamu; Ueda, Tetsuya; Hatanaka, Kazuhisa.

In: Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), Vol. 70, No. 11, 11.1987, p. 73-84.

Research output: Contribution to journalArticle

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