FABRICATION OF a-Si: H THIN FILMS BY A DOUBLE TUBED COAXIAL-LINE TYPE MICROWAVE PLASMA CVD SYSTEM.

Isamu Kato, Motoyasu Yano, Yusuke Kohyama

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This study was concerned with the fabrication of a-Si:H thin films by a double tubed coaxial-line type microwave plasma CVD system. The cw microwave of 60 w and pulsed microwave, of which the average power is 60 w and the duty ratio is 1/5, are used. The deposition rate is 0. 1 to 7 A/s dependent on the substrate position from the discharge tube end. The optical energy band gap is 1. 7 to 1. 9 ev. The boundary layer between the plasma region excited by the microwave power and the after-glow region created spatially have been estimated by using the experimental results of the dependence of the deposition rate and the optical energy band gap on the substrate position. In the spatially after-glow region, satisfactory thin films are fabricated without a plasma bombardment.

Original languageEnglish
Pages (from-to)763-767
Number of pages5
JournalShinku/Journal of the Vacuum Society of Japan
Volume28
Issue number10
Publication statusPublished - 1985

Fingerprint

Plasma CVD
Microwaves
vapor deposition
microwaves
Thin films
thin films
Deposition rates
Band structure
energy bands
Energy gap
luminescence
Gas discharge tubes
Plasmas
gas discharge tubes
Substrates
bombardment
boundary layers
Boundary layers
Fabrication
fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces

Cite this

FABRICATION OF a-Si : H THIN FILMS BY A DOUBLE TUBED COAXIAL-LINE TYPE MICROWAVE PLASMA CVD SYSTEM. / Kato, Isamu; Yano, Motoyasu; Kohyama, Yusuke.

In: Shinku/Journal of the Vacuum Society of Japan, Vol. 28, No. 10, 1985, p. 763-767.

Research output: Contribution to journalArticle

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