Fabrication of a-Si: H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance

Kiyotaka Kato*, Isamu Kato

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We have fabricated a-Si:H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance (ECR). The films fabricated in ECR plasma are predominantly Si-H bonded because of high-energy plasma particle bombardment. The films fabricated on glass substrates, however, peel off easily because of the difference in the coefficient of heat expansion between the film and the substrate. The films fabricated out of ECR plasma are not subjected to the bombardment and are mainly Si-H2 bonded. These films do not peel off even when deposited on glass substrate and are of high quality.

Original languageEnglish
Pages (from-to)343-345
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number3
Publication statusPublished - 1989 Mar

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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