Fabrication of a-Si

H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance

Kiyotaka Kato, Isamu Kato

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have fabricated a-Si:H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance (ECR). The films fabricated in ECR plasma are predominantly Si-H bonded because of high-energy plasma particle bombardment. The films fabricated on glass substrates, however, peel off easily because of the difference in the coefficient of heat expansion between the film and the substrate. The films fabricated out of ECR plasma are not subjected to the bombardment and are mainly Si-H2 bonded. These films do not peel off even when deposited on glass substrate and are of high quality.

Original languageEnglish
Pages (from-to)343-345
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number3
Publication statusPublished - 1989 Mar

Fingerprint

Electron cyclotron resonance
electron cyclotron resonance
Microwaves
Magnetic fields
microwaves
Fabrication
Thin films
fabrication
thin films
magnetic fields
Plasmas
bombardment
Substrates
Glass
glass
heat
expansion
coefficients

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

@article{9c90b03c318a4cbbbdb410d0835abc98,
title = "Fabrication of a-Si: H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance",
abstract = "We have fabricated a-Si:H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance (ECR). The films fabricated in ECR plasma are predominantly Si-H bonded because of high-energy plasma particle bombardment. The films fabricated on glass substrates, however, peel off easily because of the difference in the coefficient of heat expansion between the film and the substrate. The films fabricated out of ECR plasma are not subjected to the bombardment and are mainly Si-H2 bonded. These films do not peel off even when deposited on glass substrate and are of high quality.",
author = "Kiyotaka Kato and Isamu Kato",
year = "1989",
month = "3",
language = "English",
volume = "28",
pages = "343--345",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3",

}

TY - JOUR

T1 - Fabrication of a-Si

T2 - H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance

AU - Kato, Kiyotaka

AU - Kato, Isamu

PY - 1989/3

Y1 - 1989/3

N2 - We have fabricated a-Si:H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance (ECR). The films fabricated in ECR plasma are predominantly Si-H bonded because of high-energy plasma particle bombardment. The films fabricated on glass substrates, however, peel off easily because of the difference in the coefficient of heat expansion between the film and the substrate. The films fabricated out of ECR plasma are not subjected to the bombardment and are mainly Si-H2 bonded. These films do not peel off even when deposited on glass substrate and are of high quality.

AB - We have fabricated a-Si:H thin films using a microwave discharge under a magnetic field of electron cyclotron resonance (ECR). The films fabricated in ECR plasma are predominantly Si-H bonded because of high-energy plasma particle bombardment. The films fabricated on glass substrates, however, peel off easily because of the difference in the coefficient of heat expansion between the film and the substrate. The films fabricated out of ECR plasma are not subjected to the bombardment and are mainly Si-H2 bonded. These films do not peel off even when deposited on glass substrate and are of high quality.

UR - http://www.scopus.com/inward/record.url?scp=0024628895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024628895&partnerID=8YFLogxK

M3 - Article

VL - 28

SP - 343

EP - 345

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

ER -