Fabrication of a silicon oxide film by ozone and 1,1,1,3,3,3- hexamethyldisilazane (HMDS): Infrared Absorption analysis on a photochemical reaction in the gas phase

Ken Nakamura, Hidehiko Nonaka, Naoto Kameda, Tetsuya Nishiguchi, Shingo Ichimura

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Fourier-Transformed Infrared absorption spectroscopy (FT-IR) was applied to analysis of initial photochemical reaction of ozone (O3) and 1,1,1,3,3,3-hexamethyldisilazane (HMDS) at room temperature in the gas phase under the irradiation of an ultraviolet (UV) light, as the side reaction during the fabrication of a silicon oxide (SiO2) film by photo-assisted chemical vapor deposition (CVD). FT-IR spectrum indicated the photodissociation of O3 by the UV light, shown by the decreases in the intensity of peaks assigned to an O3 molecule in the spectrum. Under the confirmation of this photodissociation of an O3 molecule, while the UV light is known to induce no photochemical reaction of HMDS, FT-IR spectrum indicated the photochemical reaction of HMDS by its scission of Si-N-Si bond and formation of C = O bond and SiO2 in a mixture of O3 and HMDS gases, thus showing that direct reaction of photodissociated species from O3, possibly atomic oxygen, with HMDS.

Original languageEnglish
Pages (from-to)224-227
Number of pages4
JournalJournal of the Vacuum Society of Japan
Volume51
Issue number3
DOIs
Publication statusPublished - 2008 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces
  • Spectroscopy

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