Abstract
Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 6999 |
| DOIs | |
| Publication status | Published - 2008 |
| Externally published | Yes |
| Event | Organic Optoelectronics and Photonics III - Strasbourg Duration: 2008 Apr 7 → 2008 Apr 10 |
Other
| Other | Organic Optoelectronics and Photonics III |
|---|---|
| City | Strasbourg |
| Period | 08/4/7 → 08/4/10 |
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Keywords
- Ambipolar transistor
- High current density
- High luminescence
- Light emitting transistor
- Organic single crystal
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. / Bisri, Satria Zulkarnaen; Takenobu, Taishi; Yomogida, Yohei; Yamao, Takeshi; Yahiro, Masayuki; Hotta, Shu; Adachi, Chihaya; Iwasa, Yoshihiro.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6999 2008. 69990Z.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal
AU - Bisri, Satria Zulkarnaen
AU - Takenobu, Taishi
AU - Yomogida, Yohei
AU - Yamao, Takeshi
AU - Yahiro, Masayuki
AU - Hotta, Shu
AU - Adachi, Chihaya
AU - Iwasa, Yoshihiro
PY - 2008
Y1 - 2008
N2 - Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.
AB - Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.
KW - Ambipolar transistor
KW - High current density
KW - High luminescence
KW - Light emitting transistor
KW - Organic single crystal
UR - http://www.scopus.com/inward/record.url?scp=45749102142&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=45749102142&partnerID=8YFLogxK
U2 - 10.1117/12.781126
DO - 10.1117/12.781126
M3 - Conference contribution
AN - SCOPUS:45749102142
SN - 9780819471970
VL - 6999
BT - Proceedings of SPIE - The International Society for Optical Engineering
ER -