Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Takeshi Yamao, Masayuki Yahiro, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6999
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventOrganic Optoelectronics and Photonics III - Strasbourg
Duration: 2008 Apr 72008 Apr 10

Other

OtherOrganic Optoelectronics and Photonics III
CityStrasbourg
Period08/4/708/4/10

Fingerprint

Transistors
transistors
Single crystals
Fabrication
fabrication
single crystals
Hole mobility
Electron mobility
Spontaneous emission
Light emission
hole mobility
organic materials
Quantum efficiency
electron mobility
spontaneous emission
light emission
high current
quantum efficiency
Current density
current density

Keywords

  • Ambipolar transistor
  • High current density
  • High luminescence
  • Light emitting transistor
  • Organic single crystal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Bisri, S. Z., Takenobu, T., Yomogida, Y., Yamao, T., Yahiro, M., Hotta, S., ... Iwasa, Y. (2008). Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6999). [69990Z] https://doi.org/10.1117/12.781126

Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. / Bisri, Satria Zulkarnaen; Takenobu, Taishi; Yomogida, Yohei; Yamao, Takeshi; Yahiro, Masayuki; Hotta, Shu; Adachi, Chihaya; Iwasa, Yoshihiro.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6999 2008. 69990Z.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bisri, SZ, Takenobu, T, Yomogida, Y, Yamao, T, Yahiro, M, Hotta, S, Adachi, C & Iwasa, Y 2008, Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6999, 69990Z, Organic Optoelectronics and Photonics III, Strasbourg, 08/4/7. https://doi.org/10.1117/12.781126
Bisri SZ, Takenobu T, Yomogida Y, Yamao T, Yahiro M, Hotta S et al. Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6999. 2008. 69990Z https://doi.org/10.1117/12.781126
Bisri, Satria Zulkarnaen ; Takenobu, Taishi ; Yomogida, Yohei ; Yamao, Takeshi ; Yahiro, Masayuki ; Hotta, Shu ; Adachi, Chihaya ; Iwasa, Yoshihiro. / Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6999 2008.
@inproceedings{b88e7cfc06fe422f9c50b5dafd5faee1,
title = "Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal",
abstract = "Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.",
keywords = "Ambipolar transistor, High current density, High luminescence, Light emitting transistor, Organic single crystal",
author = "Bisri, {Satria Zulkarnaen} and Taishi Takenobu and Yohei Yomogida and Takeshi Yamao and Masayuki Yahiro and Shu Hotta and Chihaya Adachi and Yoshihiro Iwasa",
year = "2008",
doi = "10.1117/12.781126",
language = "English",
isbn = "9780819471970",
volume = "6999",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

AU - Bisri, Satria Zulkarnaen

AU - Takenobu, Taishi

AU - Yomogida, Yohei

AU - Yamao, Takeshi

AU - Yahiro, Masayuki

AU - Hotta, Shu

AU - Adachi, Chihaya

AU - Iwasa, Yoshihiro

PY - 2008

Y1 - 2008

N2 - Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

AB - Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

KW - Ambipolar transistor

KW - High current density

KW - High luminescence

KW - Light emitting transistor

KW - Organic single crystal

UR - http://www.scopus.com/inward/record.url?scp=45749102142&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45749102142&partnerID=8YFLogxK

U2 - 10.1117/12.781126

DO - 10.1117/12.781126

M3 - Conference contribution

SN - 9780819471970

VL - 6999

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -