Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri; Taishi Takenobu; Yohei Yomogida; Takeshi Yamao; Masayuki Yahiro; Shu Hotta; Chihaya Adachi; Yoshihiro Iwasa

doi:10.1117/12.781126

Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Takeshi Yamao, Masayuki Yahiro, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm² order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6999
DOIs	https://doi.org/10.1117/12.781126
Publication status	Published - 2008
Externally published	Yes
Event	Organic Optoelectronics and Photonics III - Strasbourg Duration: 2008 Apr 7 → 2008 Apr 10

Other

Other	Organic Optoelectronics and Photonics III
City	Strasbourg
Period	08/4/7 → 08/4/10

Keywords

Ambipolar transistor
High current density
High luminescence
Light emitting transistor
Organic single crystal

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

Access to Document

10.1117/12.781126

Cite this

Bisri, SZ, Takenobu, T, Yomogida, Y, Yamao, T, Yahiro, M, Hotta, S, Adachi, C & Iwasa, Y 2008, Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6999, 69990Z, Organic Optoelectronics and Photonics III, Strasbourg, 08/4/7. https://doi.org/10.1117/12.781126

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abstract = "Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.",

keywords = "Ambipolar transistor, High current density, High luminescence, Light emitting transistor, Organic single crystal",

author = "Bisri, {Satria Zulkarnaen} and Taishi Takenobu and Yohei Yomogida and Takeshi Yamao and Masayuki Yahiro and Shu Hotta and Chihaya Adachi and Yoshihiro Iwasa",

year = "2008",

doi = "10.1117/12.781126",

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AU - Bisri, Satria Zulkarnaen

AU - Takenobu, Taishi

AU - Yomogida, Yohei

AU - Yamao, Takeshi

AU - Yahiro, Masayuki

AU - Hotta, Shu

AU - Adachi, Chihaya

AU - Iwasa, Yoshihiro

PY - 2008

Y1 - 2008

N2 - Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

AB - Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

KW - Ambipolar transistor

KW - High current density

KW - High luminescence

KW - Light emitting transistor

KW - Organic single crystal

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DO - 10.1117/12.781126

M3 - Conference contribution

AN - SCOPUS:45749102142

SN - 9780819471970

VL - 6999

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Organic Optoelectronics and Photonics III

Y2 - 7 April 2008 through 10 April 2008

ER -

Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

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Keywords

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