Abstract
Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.
Original language | English |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 6999 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
Event | Organic Optoelectronics and Photonics III - Strasbourg Duration: 2008 Apr 7 → 2008 Apr 10 |
Other
Other | Organic Optoelectronics and Photonics III |
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City | Strasbourg |
Period | 08/4/7 → 08/4/10 |
Keywords
- Ambipolar transistor
- High current density
- High luminescence
- Light emitting transistor
- Organic single crystal
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics