Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal

Satria Zulkarnaen Bisri, Taishi Takenobu, Yohei Yomogida, Takeshi Yamao, Masayuki Yahiro, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Organic single-crystal ambipolar light-emitting transistors show a great interest due to their unique features, spectral matching with their active material spectra and the quantum efficiency preservation during ambipolar operation at high current density operation in kA/cm2 order. The development of ambipolar light emitting transistor based on high photoluminescent material, α,ω-bis(biphenylyl)terthiophene (BP3T) single crystal is reported. By using bottom-gated top-contact configuration, with Ca and Au opposed metal electrodes, high value of hole and electron mobility were obtained. Extremely bright light emission observed during ambipolar operation shows prospect for electrically driven amplified spontaneous emission from organic materials.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6999
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventOrganic Optoelectronics and Photonics III - Strasbourg
Duration: 2008 Apr 72008 Apr 10

Other

OtherOrganic Optoelectronics and Photonics III
CityStrasbourg
Period08/4/708/4/10

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Keywords

  • Ambipolar transistor
  • High current density
  • High luminescence
  • Light emitting transistor
  • Organic single crystal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Bisri, S. Z., Takenobu, T., Yomogida, Y., Yamao, T., Yahiro, M., Hotta, S., Adachi, C., & Iwasa, Y. (2008). Fabrication of ambipolar light-emitting transistor using high-photoluminescent organic single crystal. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6999). [69990Z] https://doi.org/10.1117/12.781126