Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin

Jung Hoon Yang; Munenori Degawa; Kwang Soup Song; Chunlei Wang; Hiroshi Kawarada

doi:10.1016/j.matlet.2010.02.057

Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin

Jung Hoon Yang, Munenori Degawa, Kwang Soup Song, Chunlei Wang, Hiroshi Kawarada

Research output: Contribution to journal › Article

3 Citations (Scopus)

Abstract

We have developed calcium (Ca²⁺) ion sensitive solution-gate field effect transistors (SGFETs) on polycrystalline diamond by using partial amination and immobilization of calmodulin (CaM), a specific protein to calcium ions. The CaM is covalently immobilized on functionalized diamond surface, and the functionalized surface was analyzed by X-ray photoelectron spectroscopy, respectively. Also, the high performance of the CaM-immobilized diamond SGFET for detecting Ca²⁺ were studied with respect to high selectivity and sensitivity in various concentrations and pH.

Original language	English
Pages (from-to)	2321-2324
Number of pages	4
Journal	Materials Letters
Volume	64
Issue number	21
DOIs	https://doi.org/10.1016/j.matlet.2010.02.057
Publication status	Published - 2010 Nov 15

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Keywords

Calcium ion sensor
Calmodulin
Diamond FET
Functionalization

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanical Engineering
Mechanics of Materials

Cite this

Yang, J. H., Degawa, M., Song, K. S., Wang, C., & Kawarada, H. (2010). Fabrication of calcium ion sensitive diamond field effect transistors (FETs) based on immobilized calmodulin. Materials Letters, 64(21), 2321-2324. https://doi.org/10.1016/j.matlet.2010.02.057

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abstract = "We have developed calcium (Ca2+) ion sensitive solution-gate field effect transistors (SGFETs) on polycrystalline diamond by using partial amination and immobilization of calmodulin (CaM), a specific protein to calcium ions. The CaM is covalently immobilized on functionalized diamond surface, and the functionalized surface was analyzed by X-ray photoelectron spectroscopy, respectively. Also, the high performance of the CaM-immobilized diamond SGFET for detecting Ca2+ were studied with respect to high selectivity and sensitivity in various concentrations and pH.",

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AU - Yang, Jung Hoon

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AU - Kawarada, Hiroshi

PY - 2010/11/15

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N2 - We have developed calcium (Ca2+) ion sensitive solution-gate field effect transistors (SGFETs) on polycrystalline diamond by using partial amination and immobilization of calmodulin (CaM), a specific protein to calcium ions. The CaM is covalently immobilized on functionalized diamond surface, and the functionalized surface was analyzed by X-ray photoelectron spectroscopy, respectively. Also, the high performance of the CaM-immobilized diamond SGFET for detecting Ca2+ were studied with respect to high selectivity and sensitivity in various concentrations and pH.

AB - We have developed calcium (Ca2+) ion sensitive solution-gate field effect transistors (SGFETs) on polycrystalline diamond by using partial amination and immobilization of calmodulin (CaM), a specific protein to calcium ions. The CaM is covalently immobilized on functionalized diamond surface, and the functionalized surface was analyzed by X-ray photoelectron spectroscopy, respectively. Also, the high performance of the CaM-immobilized diamond SGFET for detecting Ca2+ were studied with respect to high selectivity and sensitivity in various concentrations and pH.

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KW - Diamond FET

KW - Functionalization

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10.1016/j.matlet.2010.02.057