FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES.

Shuichi Okano, Hiroshi Yamakawa, Masakuni Suzuki, Akio Hiraki

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

Chalcogenide amorphous semiconductor diodes were fabricated using low-temperature thermal diffusion techniques. Anomalous diffusion profiles of Cd ions were observed by secondary ion mass spectroscopy. Two opposite potential barriers were formed owing to a peculiar diffusion profile of Cd; thus, the rectifying effects became poor. A high density of vacancies and dislocation-like defects, especially in the surface region, is considered to cause anomalous diffusion profiles of Cd ions.

Original languageEnglish
Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Pages1102-1106
Number of pages5
Volume26
Edition7
Publication statusPublished - 1987 Jul
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Okano, S., Yamakawa, H., Suzuki, M., & Hiraki, A. (1987). FABRICATION OF CHALCOGENIDE AMORPHOUS SEMICONDUCTOR DIODES USING LOW TEMPERATURE THERMAL DIFFUSION TECHNIQUES. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes (7 ed., Vol. 26, pp. 1102-1106)