Abstract
A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.
Original language | English |
---|---|
Pages (from-to) | 2043-2046 |
Number of pages | 4 |
Journal | Diamond and Related Materials |
Volume | 14 |
Issue number | 11-12 |
DOIs | |
Publication status | Published - 2005 Nov 1 |
Event | Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue - Duration: 2005 May 11 → 2005 May 14 |
Keywords
- Cut-off frequency
- Field effect transistor
- Surface conductive layer
- Transconductance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering