TY - JOUR
T1 - Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface
AU - Saito, Takeyasu
AU - Park, Kyung Ho
AU - Hirama, Kazuyuki
AU - Umezawa, Hitoshi
AU - Satoh, Mitsuya
AU - Kawarada, Hiroshi
AU - Okushi, Hideyo
N1 - Funding Information:
This work was carried out under the Advanced Diamond Devices Project, The New Energy and Industrial Technology Development Organization (NEDO), Japan. A part of this work was supported by the AIST-Nano-Processing Facility (AIST-NPF), Nanotechnology Research Institute (NRI) of the National Institute of Advanced Industrial Science and Technology (AIST), a member of the Nano-foundry Group, conducts the Nanoprocessing Partnership Program (NPPP), as a part of the Nanotechnology Support Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT).
PY - 2005/11
Y1 - 2005/11
N2 - A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.
AB - A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.
KW - Cut-off frequency
KW - Field effect transistor
KW - Surface conductive layer
KW - Transconductance
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U2 - 10.1016/j.diamond.2005.08.044
DO - 10.1016/j.diamond.2005.08.044
M3 - Conference article
AN - SCOPUS:27744439038
VL - 14
SP - 2043
EP - 2046
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 11-12
T2 - Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue
Y2 - 11 May 2005 through 14 May 2005
ER -