Abstract
A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.
| Original language | English |
|---|---|
| Pages (from-to) | 2043-2046 |
| Number of pages | 4 |
| Journal | Diamond and Related Materials |
| Volume | 14 |
| Issue number | 11-12 |
| DOIs | |
| Publication status | Published - 2005 Nov |
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Keywords
- Cut-off frequency
- Field effect transistor
- Surface conductive layer
- Transconductance
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface. / Saito, Takeyasu; Park, Kyung Ho; Hirama, Kazuyuki; Umezawa, Hitoshi; Satoh, Mitsuya; Kawarada, Hiroshi; Okushi, Hideyo.
In: Diamond and Related Materials, Vol. 14, No. 11-12, 11.2005, p. 2043-2046.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface
AU - Saito, Takeyasu
AU - Park, Kyung Ho
AU - Hirama, Kazuyuki
AU - Umezawa, Hitoshi
AU - Satoh, Mitsuya
AU - Kawarada, Hiroshi
AU - Okushi, Hideyo
PY - 2005/11
Y1 - 2005/11
N2 - A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.
AB - A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.
KW - Cut-off frequency
KW - Field effect transistor
KW - Surface conductive layer
KW - Transconductance
UR - http://www.scopus.com/inward/record.url?scp=27744439038&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=27744439038&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2005.08.044
DO - 10.1016/j.diamond.2005.08.044
M3 - Article
AN - SCOPUS:27744439038
VL - 14
SP - 2043
EP - 2046
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 11-12
ER -