Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Takeyasu Saito, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Hideyo Okushi

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.

    Original languageEnglish
    Pages (from-to)2043-2046
    Number of pages4
    JournalDiamond and Related Materials
    Volume14
    Issue number11-12
    DOIs
    Publication statusPublished - 2005 Nov

    Fingerprint

    MISFET devices
    Diamond
    Boron
    MIS (semiconductors)
    Diamonds
    boron
    field effect transistors
    diamonds
    Fabrication
    fabrication
    Carrier concentration
    Drain current
    Carrier mobility
    Cutoff frequency
    Transconductance
    transconductance
    Field effect transistors
    carrier mobility
    Film thickness
    film thickness

    Keywords

    • Cut-off frequency
    • Field effect transistor
    • Surface conductive layer
    • Transconductance

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface. / Saito, Takeyasu; Park, Kyung Ho; Hirama, Kazuyuki; Umezawa, Hitoshi; Satoh, Mitsuya; Kawarada, Hiroshi; Okushi, Hideyo.

    In: Diamond and Related Materials, Vol. 14, No. 11-12, 11.2005, p. 2043-2046.

    Research output: Contribution to journalArticle

    Saito, Takeyasu ; Park, Kyung Ho ; Hirama, Kazuyuki ; Umezawa, Hitoshi ; Satoh, Mitsuya ; Kawarada, Hiroshi ; Okushi, Hideyo. / Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface. In: Diamond and Related Materials. 2005 ; Vol. 14, No. 11-12. pp. 2043-2046.
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    abstract = "A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.",
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    author = "Takeyasu Saito and Park, {Kyung Ho} and Kazuyuki Hirama and Hitoshi Umezawa and Mitsuya Satoh and Hiroshi Kawarada and Hideyo Okushi",
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    AU - Saito, Takeyasu

    AU - Park, Kyung Ho

    AU - Hirama, Kazuyuki

    AU - Umezawa, Hitoshi

    AU - Satoh, Mitsuya

    AU - Kawarada, Hiroshi

    AU - Okushi, Hideyo

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    AB - A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.

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    KW - Field effect transistor

    KW - Surface conductive layer

    KW - Transconductance

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