Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Takeyasu Saito; Kyung Ho Park; Kazuyuki Hirama; Hitoshi Umezawa; Mitsuya Satoh; Hiroshi Kawarada; Hideyo Okushi

doi:10.1016/j.diamond.2005.08.044

Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface

Takeyasu Saito, Kyung Ho Park, Kazuyuki Hirama, Hitoshi Umezawa, Mitsuya Satoh, Hiroshi Kawarada, Hideyo Okushi

School of Fundamental Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF₂ and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm²/V s and 10¹³/cm², respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 10¹⁵/cm³ and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (g_m) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.

Original language	English
Pages (from-to)	2043-2046
Number of pages	4
Journal	Diamond and Related Materials
Volume	14
Issue number	11-12
DOIs	https://doi.org/10.1016/j.diamond.2005.08.044
Publication status	Published - 2005 Nov 1
Event	Proceedings of the 10th International Conference on New Diamond Science and Technology (ICNDST-10) ICNDST-10 Special Issue - Duration: 2005 May 11 → 2005 May 14

Keywords

Cut-off frequency
Field effect transistor
Surface conductive layer
Transconductance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2005.08.044

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Fabrication of diamond MISFET with micron-sized gate length on boron-doped (111) surface. / Saito, Takeyasu; Park, Kyung Ho; Hirama, Kazuyuki; Umezawa, Hitoshi; Satoh, Mitsuya; Kawarada, Hiroshi; Okushi, Hideyo.

In: Diamond and Related Materials, Vol. 14, No. 11-12, 01.11.2005, p. 2043-2046.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.",

keywords = "Cut-off frequency, Field effect transistor, Surface conductive layer, Transconductance",

author = "Takeyasu Saito and Park, {Kyung Ho} and Kazuyuki Hirama and Hitoshi Umezawa and Mitsuya Satoh and Hiroshi Kawarada and Hideyo Okushi",

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AU - Saito, Takeyasu

AU - Park, Kyung Ho

AU - Hirama, Kazuyuki

AU - Umezawa, Hitoshi

AU - Satoh, Mitsuya

AU - Kawarada, Hiroshi

AU - Okushi, Hideyo

PY - 2005/11/1

Y1 - 2005/11/1

N2 - A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.

AB - A hydrogenated surface conductive layer of B-doped diamond on (111) was employed to fabricate a metal insulator semiconductor field effect transistor (MISFET) using a CaF2 and Cu stacked gate. The carrier mobility and concentration of the hydrogenated surface on (111) before FET processing were 35 cm2/V s and 1013/cm2, respectively, when bulk carrier concentration and film thickness of the B-doped underlaying diamond was 3 × 1015/cm3 and 1.5 μm, respectively. The DC characteristics of the gate with 1.1 μm length and 50 μm width showed that the maximum measured drain current was 240 mA/mm at - 3.0 V gate voltage, and the maximum transconductance (gm) was 70 mS/mm. The cut-off frequency of 4 GHz was obtained, which is one of the best values for the RF characteristics of a diamond homoepitaxial (111) MISFET.

KW - Cut-off frequency

KW - Field effect transistor

KW - Surface conductive layer

KW - Transconductance

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