Fabrication of diamond single-hole transistors using AFM anodization process

Tokishige Banno, Minoru Tachiki, Hokuto Seo, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    30 Citations (Scopus)


    By the field-assisted local anodization technique using an atomic force microscope (AFM), a single-hole transistor has been fabricated on an undoped hydrogen-terminated diamond surface where p-type conduction occurs on the subsurface region. A dual side-gated FET structure has been applied to modulate the island potential in the single-hole transistor. The island size is 230 nm×230 nm, and the width of the barrier is approximately 100 nm. Measurements of the current-gate voltage characteristic at a temperature of 4.6 K show significant non-linearities including a current oscillation suggestive of single-hole transistor behavior. The oscillation that is significantly affected by the application of the side gate potential is explained by the shrinkage of the conductive island with the expansion of the depletion region.

    Original languageEnglish
    Pages (from-to)387-391
    Number of pages5
    JournalDiamond and Related Materials
    Issue number3-6
    Publication statusPublished - 2002 Mar



    • Coulomb oscillation
    • Depletion region
    • Diamond properties and applications
    • Single-hole transistor

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this