Fabrication of diamond single-hole transistors using AFM anodization process

Tokishige Banno, Minoru Tachiki, Hokuto Seo, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    30 Citations (Scopus)

    Abstract

    By the field-assisted local anodization technique using an atomic force microscope (AFM), a single-hole transistor has been fabricated on an undoped hydrogen-terminated diamond surface where p-type conduction occurs on the subsurface region. A dual side-gated FET structure has been applied to modulate the island potential in the single-hole transistor. The island size is 230 nm×230 nm, and the width of the barrier is approximately 100 nm. Measurements of the current-gate voltage characteristic at a temperature of 4.6 K show significant non-linearities including a current oscillation suggestive of single-hole transistor behavior. The oscillation that is significantly affected by the application of the side gate potential is explained by the shrinkage of the conductive island with the expansion of the depletion region.

    Original languageEnglish
    Pages (from-to)387-391
    Number of pages5
    JournalDiamond and Related Materials
    Volume11
    Issue number3-6
    DOIs
    Publication statusPublished - 2002 Mar

    Fingerprint

    Diamond
    Diamonds
    Transistors
    Microscopes
    transistors
    diamonds
    microscopes
    Fabrication
    fabrication
    oscillations
    Field effect transistors
    shrinkage
    Hydrogen
    depletion
    field effect transistors
    nonlinearity
    conduction
    expansion
    Electric potential
    electric potential

    Keywords

    • Coulomb oscillation
    • Depletion region
    • Diamond properties and applications
    • Single-hole transistor

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    Cite this

    Fabrication of diamond single-hole transistors using AFM anodization process. / Banno, Tokishige; Tachiki, Minoru; Seo, Hokuto; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: Diamond and Related Materials, Vol. 11, No. 3-6, 03.2002, p. 387-391.

    Research output: Contribution to journalArticle

    Banno, Tokishige ; Tachiki, Minoru ; Seo, Hokuto ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Fabrication of diamond single-hole transistors using AFM anodization process. In: Diamond and Related Materials. 2002 ; Vol. 11, No. 3-6. pp. 387-391.
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