Fabrication of epitaxial Co2MnSi films on lattice-matched MgAl2O4 substrates by ion-beam assisted sputtering

K. Ueda*, M. Nishiwaki, T. Soumiya, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We show that epitaxial Co2MnSi films can be fabricated on lattice-matched MgAl2O4 substrates using an ion-beam-assisted sputtering method. Low temperature growth below ~ 500 °C with Ar ion-beam assistance enabled high-quality Co2MnSi films with ideal saturation magnetization and highly-ordered L21 structures. The Co2MnSi films also demonstrated a negative anisotropic magnetoresistance of ~ 0.1% at room temperature, which is a typical characteristic of half-metals. These results suggest that ion-beam assisted sputtering is an effective method of fabricating high-quality, half-metallic Co2MnSi films at low growth temperatures.

Original languageEnglish
Pages (from-to)134-137
Number of pages4
JournalThin Solid Films
Volume570
Issue numberPartA
DOIs
Publication statusPublished - 2014 Nov 3
Externally publishedYes

Keywords

  • Cobalt manganese silicon
  • Half-metal
  • Heusler alloy
  • Ion-beam assisted sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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