Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

H. Shibata, Y. Makita, H. Katsumata, S. Kimura, Naoto Kobayashi, M. Hasegawa, S. Hishita, A. C. Beye, H. Takahashi, J. Tanabe, S. Uekusa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages517-522
Number of pages6
Volume402
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: 1995 Nov 271995 Nov 30

Other

OtherProceedings of the 1995 MRS Fall Symposium
CityBoston, MA, USA
Period95/11/2795/11/30

Fingerprint

Silicides
Silicon
Molecular beam epitaxy
Ion beams
Fabrication
Thin films
Epitaxial growth
Sputtering
Precipitates
Atoms
Processing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Shibata, H., Makita, Y., Katsumata, H., Kimura, S., Kobayashi, N., Hasegawa, M., ... Uekusa, S. (1996). Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy. In Materials Research Society Symposium - Proceedings (Vol. 402, pp. 517-522). Materials Research Society.

Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy. / Shibata, H.; Makita, Y.; Katsumata, H.; Kimura, S.; Kobayashi, Naoto; Hasegawa, M.; Hishita, S.; Beye, A. C.; Takahashi, H.; Tanabe, J.; Uekusa, S.

Materials Research Society Symposium - Proceedings. Vol. 402 Materials Research Society, 1996. p. 517-522.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shibata, H, Makita, Y, Katsumata, H, Kimura, S, Kobayashi, N, Hasegawa, M, Hishita, S, Beye, AC, Takahashi, H, Tanabe, J & Uekusa, S 1996, Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy. in Materials Research Society Symposium - Proceedings. vol. 402, Materials Research Society, pp. 517-522, Proceedings of the 1995 MRS Fall Symposium, Boston, MA, USA, 95/11/27.
Shibata H, Makita Y, Katsumata H, Kimura S, Kobayashi N, Hasegawa M et al. Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy. In Materials Research Society Symposium - Proceedings. Vol. 402. Materials Research Society. 1996. p. 517-522
Shibata, H. ; Makita, Y. ; Katsumata, H. ; Kimura, S. ; Kobayashi, Naoto ; Hasegawa, M. ; Hishita, S. ; Beye, A. C. ; Takahashi, H. ; Tanabe, J. ; Uekusa, S. / Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy. Materials Research Society Symposium - Proceedings. Vol. 402 Materials Research Society, 1996. pp. 517-522
@inproceedings{d6e346c5e96145b7834f77cd1650836b,
title = "Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy",
abstract = "We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C.",
author = "H. Shibata and Y. Makita and H. Katsumata and S. Kimura and Naoto Kobayashi and M. Hasegawa and S. Hishita and Beye, {A. C.} and H. Takahashi and J. Tanabe and S. Uekusa",
year = "1996",
language = "English",
volume = "402",
pages = "517--522",
booktitle = "Materials Research Society Symposium - Proceedings",
publisher = "Materials Research Society",

}

TY - GEN

T1 - Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy

AU - Shibata, H.

AU - Makita, Y.

AU - Katsumata, H.

AU - Kimura, S.

AU - Kobayashi, Naoto

AU - Hasegawa, M.

AU - Hishita, S.

AU - Beye, A. C.

AU - Takahashi, H.

AU - Tanabe, J.

AU - Uekusa, S.

PY - 1996

Y1 - 1996

N2 - We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C.

AB - We have developed successfully the combined ion beam and molecular beam epitaxy (CIBMBE) system with a newly designed Knudsen cell for Si effusion. The CIBMBE system was applied to the epitaxial growth of Si 1-xC x alloy thin films on Si using low-energy (100 - 300 eV) C + ion beam. Preliminary results on the characterization of the deposited films suggest high potential and reliability of the new Knudsen cell for Si effusion, as well as high ability of the CIBMBE method to produce thermally non-equilibrium materials. In addition, they indicate that the value of x decreases with increasing I C, which suggests that the selective sputtering for deposited C atoms by incident C + ion beams takes place during CIBMBE processing. Precipitates of β-SiC were also found to be formed in the deposited films, whose amount was observed to increase with increasing I C.

UR - http://www.scopus.com/inward/record.url?scp=0029754158&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029754158&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029754158

VL - 402

SP - 517

EP - 522

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

ER -