Abstract
In order to realize fine microstructures with high aspect ratio, two kind of thick-resist-based metal molding processes were studied. A novel technique obtaining fine line/space and high aspect ratio thick photoresist patterns on a glass substrate by the simple UV lithography was developed. A three-layer resist method using reactive ion etching (PIE) for patterning thick photoresist was also examined. The former method is to use fine thin metal patterns (<1 μm) formed on the glass substrate as the exposure mask. A thick negative photoresist is coated on it and UV light is iliuminated from the backside. Perfect contact between mask and photoresist is obtained and the influence of light diffraction is also avoided. By using SU-8 as the negative photoresist, minimum line/space of 1 μm and high aspect ratio of about 5 was achieved. The metal layer is served as a seed layer for Ni electroplating as well. Metal microstructures were also fabricated by the three-layer resist method using the thick photoresist-thin SiO 2-thin photoresist structure. Even an usual contact UV lithography was applied to pattern the thin photoresist layer and a usual CCP-RIE was used to etch the SiO 2 and thick photoresist layer, at least 1 μm gap microstructures were obtained by the Ni electroplating. Micro-packaging method using SiO 2-SiO 2 bonding with hydrofluoric acid was also studied. HF bonding has a remarkable feature that the bonding of quartz-to-quartz can be obtained at low temperature (<80 C). The bonding conditions suitable for micropackaging were examined under different HF concentration, pressure, and temperature. Reasonable bond strength equal to that by the anodic bonding is obtained under high-applied pressure during bonding. Packaging method is proposed using combination of the thick-resist-based molding and the HF bonding.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 486-493 |
| Number of pages | 8 |
| Volume | 3893 |
| Publication status | Published - 1999 |
| Event | Proceedings of the 1999 Design, Characterization, and Packaging for MEMS and Microelectronics - Royal Pines Resort, Aust Duration: 1999 Oct 27 → 1999 Oct 29 |
Other
| Other | Proceedings of the 1999 Design, Characterization, and Packaging for MEMS and Microelectronics |
|---|---|
| City | Royal Pines Resort, Aust |
| Period | 99/10/27 → 99/10/29 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Fabrication of fine metal microstructures packaged in the bonded glass substrates. / Kawamura, Akihito; Ike, Shinichi; Shoji, Shuichi.
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3893 Society of Photo-Optical Instrumentation Engineers, 1999. p. 486-493.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fabrication of fine metal microstructures packaged in the bonded glass substrates
AU - Kawamura, Akihito
AU - Ike, Shinichi
AU - Shoji, Shuichi
PY - 1999
Y1 - 1999
N2 - In order to realize fine microstructures with high aspect ratio, two kind of thick-resist-based metal molding processes were studied. A novel technique obtaining fine line/space and high aspect ratio thick photoresist patterns on a glass substrate by the simple UV lithography was developed. A three-layer resist method using reactive ion etching (PIE) for patterning thick photoresist was also examined. The former method is to use fine thin metal patterns (<1 μm) formed on the glass substrate as the exposure mask. A thick negative photoresist is coated on it and UV light is iliuminated from the backside. Perfect contact between mask and photoresist is obtained and the influence of light diffraction is also avoided. By using SU-8 as the negative photoresist, minimum line/space of 1 μm and high aspect ratio of about 5 was achieved. The metal layer is served as a seed layer for Ni electroplating as well. Metal microstructures were also fabricated by the three-layer resist method using the thick photoresist-thin SiO 2-thin photoresist structure. Even an usual contact UV lithography was applied to pattern the thin photoresist layer and a usual CCP-RIE was used to etch the SiO 2 and thick photoresist layer, at least 1 μm gap microstructures were obtained by the Ni electroplating. Micro-packaging method using SiO 2-SiO 2 bonding with hydrofluoric acid was also studied. HF bonding has a remarkable feature that the bonding of quartz-to-quartz can be obtained at low temperature (<80 C). The bonding conditions suitable for micropackaging were examined under different HF concentration, pressure, and temperature. Reasonable bond strength equal to that by the anodic bonding is obtained under high-applied pressure during bonding. Packaging method is proposed using combination of the thick-resist-based molding and the HF bonding.
AB - In order to realize fine microstructures with high aspect ratio, two kind of thick-resist-based metal molding processes were studied. A novel technique obtaining fine line/space and high aspect ratio thick photoresist patterns on a glass substrate by the simple UV lithography was developed. A three-layer resist method using reactive ion etching (PIE) for patterning thick photoresist was also examined. The former method is to use fine thin metal patterns (<1 μm) formed on the glass substrate as the exposure mask. A thick negative photoresist is coated on it and UV light is iliuminated from the backside. Perfect contact between mask and photoresist is obtained and the influence of light diffraction is also avoided. By using SU-8 as the negative photoresist, minimum line/space of 1 μm and high aspect ratio of about 5 was achieved. The metal layer is served as a seed layer for Ni electroplating as well. Metal microstructures were also fabricated by the three-layer resist method using the thick photoresist-thin SiO 2-thin photoresist structure. Even an usual contact UV lithography was applied to pattern the thin photoresist layer and a usual CCP-RIE was used to etch the SiO 2 and thick photoresist layer, at least 1 μm gap microstructures were obtained by the Ni electroplating. Micro-packaging method using SiO 2-SiO 2 bonding with hydrofluoric acid was also studied. HF bonding has a remarkable feature that the bonding of quartz-to-quartz can be obtained at low temperature (<80 C). The bonding conditions suitable for micropackaging were examined under different HF concentration, pressure, and temperature. Reasonable bond strength equal to that by the anodic bonding is obtained under high-applied pressure during bonding. Packaging method is proposed using combination of the thick-resist-based molding and the HF bonding.
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M3 - Conference contribution
AN - SCOPUS:0033316657
VL - 3893
SP - 486
EP - 493
BT - Proceedings of SPIE - The International Society for Optical Engineering
PB - Society of Photo-Optical Instrumentation Engineers
ER -