Abstract
Recently, organic molecular electronic devices such as molecular thin-film transistors have received considerable attention as possible candidates for next-generation electronic and optical devices. This paper reports on fabrication technologies of flat metallic electrodes on insulating substrates with a micrometer separation for high-performance molecular device evaluation. The key technologies of fabricating planar-type electrodes are the liftoff method by the combination of bilayer photoresist with overhang profile, electron beam evaporation of thin metal (Ti and Au) films, and SiO2-CMP (Chemical Mechanical Polishing) method of CVD (Chemical Vapor Deposition-deposited TEOS (tetraethoxysilane)-SiO2 layer. The raggedness of the electrode/insulator interface and the electrode surface of the micro-gap electrodes were less than 3 nm. The isolation characteristics of fabricated electrodes were on the order of 1013 ohms at room temperature, which is sufficient for evaluating electronic properties of organic thin-film devices. Finally, pentacene FET (Field Effect Transistor) characteristics are discussed fabricated on the micro-gap flat electrodes. The mobility of this FET was 0.015 cm2/Vs, which was almost on the order of the previous results. These results suggest that high-performance organic thin-film transistors can be realized on these advanced electrode structures.
| Original language | English |
|---|---|
| Pages (from-to) | 39-46 |
| Number of pages | 8 |
| Journal | Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi) |
| Volume | 152 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2005 Jul |
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Keywords
- CMP
- Flat electrode
- Micro-gap
- Molecular electronics
- Nano-gap
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Fabrication of flat micro-gap electrodes for molecular electronics. / Edura, Tomohiko; Mizuno, Jun; Tsutsui, Ken; Saito, Mikiko; Tokuda, Masahide; Onozato, Harumasa; Koizumi, Toshiko; Wada, Yasuo; Haemori, Masamitsu; Koinuma, Hideomi.
In: Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi), Vol. 152, No. 2, 07.2005, p. 39-46.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of flat micro-gap electrodes for molecular electronics
AU - Edura, Tomohiko
AU - Mizuno, Jun
AU - Tsutsui, Ken
AU - Saito, Mikiko
AU - Tokuda, Masahide
AU - Onozato, Harumasa
AU - Koizumi, Toshiko
AU - Wada, Yasuo
AU - Haemori, Masamitsu
AU - Koinuma, Hideomi
PY - 2005/7
Y1 - 2005/7
N2 - Recently, organic molecular electronic devices such as molecular thin-film transistors have received considerable attention as possible candidates for next-generation electronic and optical devices. This paper reports on fabrication technologies of flat metallic electrodes on insulating substrates with a micrometer separation for high-performance molecular device evaluation. The key technologies of fabricating planar-type electrodes are the liftoff method by the combination of bilayer photoresist with overhang profile, electron beam evaporation of thin metal (Ti and Au) films, and SiO2-CMP (Chemical Mechanical Polishing) method of CVD (Chemical Vapor Deposition-deposited TEOS (tetraethoxysilane)-SiO2 layer. The raggedness of the electrode/insulator interface and the electrode surface of the micro-gap electrodes were less than 3 nm. The isolation characteristics of fabricated electrodes were on the order of 1013 ohms at room temperature, which is sufficient for evaluating electronic properties of organic thin-film devices. Finally, pentacene FET (Field Effect Transistor) characteristics are discussed fabricated on the micro-gap flat electrodes. The mobility of this FET was 0.015 cm2/Vs, which was almost on the order of the previous results. These results suggest that high-performance organic thin-film transistors can be realized on these advanced electrode structures.
AB - Recently, organic molecular electronic devices such as molecular thin-film transistors have received considerable attention as possible candidates for next-generation electronic and optical devices. This paper reports on fabrication technologies of flat metallic electrodes on insulating substrates with a micrometer separation for high-performance molecular device evaluation. The key technologies of fabricating planar-type electrodes are the liftoff method by the combination of bilayer photoresist with overhang profile, electron beam evaporation of thin metal (Ti and Au) films, and SiO2-CMP (Chemical Mechanical Polishing) method of CVD (Chemical Vapor Deposition-deposited TEOS (tetraethoxysilane)-SiO2 layer. The raggedness of the electrode/insulator interface and the electrode surface of the micro-gap electrodes were less than 3 nm. The isolation characteristics of fabricated electrodes were on the order of 1013 ohms at room temperature, which is sufficient for evaluating electronic properties of organic thin-film devices. Finally, pentacene FET (Field Effect Transistor) characteristics are discussed fabricated on the micro-gap flat electrodes. The mobility of this FET was 0.015 cm2/Vs, which was almost on the order of the previous results. These results suggest that high-performance organic thin-film transistors can be realized on these advanced electrode structures.
KW - CMP
KW - Flat electrode
KW - Micro-gap
KW - Molecular electronics
KW - Nano-gap
UR - http://www.scopus.com/inward/record.url?scp=20444459160&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=20444459160&partnerID=8YFLogxK
U2 - 10.1002/eej.20152
DO - 10.1002/eej.20152
M3 - Article
AN - SCOPUS:20444459160
VL - 152
SP - 39
EP - 46
JO - Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
JF - Electrical Engineering in Japan (English translation of Denki Gakkai Ronbunshi)
SN - 0424-7760
IS - 2
ER -