Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

Y. Suzuki; Y. Horikoshi; M. Kobayashi; H. Okamoto

doi:10.1049/el:19840265

Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

Y. Suzuki, Y. Horikoshi, M. Kobayashi, H. Okamoto

School of Advanced Science and Engineering

Research output: Contribution to journal › Article

29 Citations (Scopus)

Abstract

By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three limes in the ultimate output power was achieved as compared with an MQW laser without window.

Original language	English
Pages (from-to)	383-384
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	9
DOIs	https://doi.org/10.1049/el:19840265
Publication status	Published - 1984 Apr 26

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Keywords

Lasers and laser applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Suzuki, Y., Horikoshi, Y., Kobayashi, M., & Okamoto, H. (1984). Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying. Electronics Letters, 20(9), 383-384. https://doi.org/10.1049/el:19840265

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Access to Document

10.1049/el:19840265