Abstract
By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three limes in the ultimate output power was achieved as compared with an MQW laser without window.
| Original language | English |
|---|---|
| Pages (from-to) | 383-384 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 20 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1984 Apr 26 |
| Externally published | Yes |
Keywords
- Lasers and laser applications
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Suzuki, Y., Horikoshi, Y., Kobayashi, M., & Okamoto, H. (1984). Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying. Electronics Letters, 20(9), 383-384. https://doi.org/10.1049/el:19840265