Abstract
By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three limes in the ultimate output power was achieved as compared with an MQW laser without window.
Original language | English |
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Pages (from-to) | 383-384 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 20 |
Issue number | 9 |
DOIs | |
Publication status | Published - 1984 Apr 26 |
Externally published | Yes |
Keywords
- Lasers and laser applications
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering