Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

Y. Suzuki; Y. Horikoshi; M. Kobayashi; H. Okamoto

doi:10.1049/el:19840265

Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

Y. Suzuki, Y. Horikoshi, M. Kobayashi, H. Okamoto

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three limes in the ultimate output power was achieved as compared with an MQW laser without window.

Original language	English
Pages (from-to)	383-384
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	9
DOIs	https://doi.org/10.1049/el:19840265
Publication status	Published - 1984 Apr 26
Externally published	Yes

Keywords

Lasers and laser applications
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19840265

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@article{6ae86fc2c2b24ae7bd2a2535d758cbd6,

title = "Fabrication of GaALAs {\textquoteleft}window-stripe{\textquoteright} multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying",

abstract = "By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three limes in the ultimate output power was achieved as compared with an MQW laser without window.",

keywords = "Lasers and laser applications, Semiconductor lasers",

author = "Y. Suzuki and Y. Horikoshi and M. Kobayashi and H. Okamoto",

year = "1984",

month = apr,

day = "26",

doi = "10.1049/el:19840265",

language = "English",

volume = "20",

pages = "383--384",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "9",

}

TY - JOUR

T1 - Fabrication of GaALAs ‘window-stripe’ multi-quantum-well heterostructure lasers utilising Zn diffusion-induced alloying

AU - Suzuki, Y.

AU - Horikoshi, Y.

AU - Kobayashi, M.

AU - Okamoto, H.

PY - 1984/4/26

Y1 - 1984/4/26

N2 - By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three limes in the ultimate output power was achieved as compared with an MQW laser without window.

AB - By utilising Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three limes in the ultimate output power was achieved as compared with an MQW laser without window.

KW - Lasers and laser applications

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=0021405920&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021405920&partnerID=8YFLogxK

U2 - 10.1049/el:19840265

DO - 10.1049/el:19840265

M3 - Article

AN - SCOPUS:0021405920

VL - 20

SP - 383

EP - 384

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 9

ER -