Abstract
By utilizing Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.
| Original language | English |
|---|---|
| Pages (from-to) | 383-384 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 20 |
| Issue number | 9 |
| Publication status | Published - 1984 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
FABRICATION OF GaAlAs 'WINDOW-STRIPE' MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILISING Zn DIFFUSION-INDUCED ALLOYING. / Suzuki, Y.; Horikoshi, Y.; Kobayashi, Masakazu; Okamoto, H.
In: Electronics Letters, Vol. 20, No. 9, 01.01.1984, p. 383-384.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - FABRICATION OF GaAlAs 'WINDOW-STRIPE' MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILISING Zn DIFFUSION-INDUCED ALLOYING.
AU - Suzuki, Y.
AU - Horikoshi, Y.
AU - Kobayashi, Masakazu
AU - Okamoto, H.
PY - 1984/1/1
Y1 - 1984/1/1
N2 - By utilizing Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.
AB - By utilizing Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.
UR - http://www.scopus.com/inward/record.url?scp=0021405920&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0021405920&partnerID=8YFLogxK
M3 - Article
VL - 20
SP - 383
EP - 384
JO - Electronics Letters
JF - Electronics Letters
SN - 0013-5194
IS - 9
ER -