FABRICATION OF GaAlAs 'WINDOW-STRIPE' MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILISING Zn DIFFUSION-INDUCED ALLOYING.

Y. Suzuki, Y. Horikoshi, Masakazu Kobayashi, H. Okamoto

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

By utilizing Zn-diffusion induced alloying, a window-stripe GaAs-AlGaAs multi-quantum-well (MQW) laser was fabricated, and an increase by three times in the ultimate output power was achieved as compared with an MQW laser without window.

Original languageEnglish
Pages (from-to)383-384
Number of pages2
JournalElectronics Letters
Volume20
Issue number9
Publication statusPublished - 1984 Jan 1
Externally publishedYes

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Quantum well lasers
Semiconductor quantum wells
Heterojunctions
Laser windows
Lasers
Alloying

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

FABRICATION OF GaAlAs 'WINDOW-STRIPE' MULTI-QUANTUM-WELL HETEROSTRUCTURE LASERS UTILISING Zn DIFFUSION-INDUCED ALLOYING. / Suzuki, Y.; Horikoshi, Y.; Kobayashi, Masakazu; Okamoto, H.

In: Electronics Letters, Vol. 20, No. 9, 01.01.1984, p. 383-384.

Research output: Contribution to journalArticle

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